Identifying and Engineering the Electronic Properties of the Resistive Switching Interface

H. Li,Z. Zhang,L. P. Shi

DOI: https://doi.org/10.1007/s11664-015-4249-8

IF: 2.1

2015-01-01

Journal of Electronic Materials

Abstract:The resistive switching interface is promising for building random access memory devices with electroforming-free characteristics, rectification functionality and highly reproducible resistive switching performance. The electronic structures of the resistive switching interface are important not only from a fundamental point of view, but also from the fascinating perspective of interface engineering for high performance devices. However, the electronic properties of typical resistive switching interfacial structures at an atomic level are less well understood, compared to those of bulky resistive switching structures. In this work, we study the electronic structures of two typical resistive switching interfacial structures, TiO 2 /Ti 4 O 7 and Ta 2 O 5 /TaO 2 , using the screened exchange (sX-LDA) functional. We uncover that the system Fermi energies of both interfaces are just above the conduction band edge of the corresponding stoichiometric oxides. According to the defect charge transition levels, the oxygen vacancy is stabilized at the −2 charged state in Ta 2 O 5 and TiO 2 where the switching takes place. However, it is desirable for the +2 charged oxygen vacancy to be stabilized to achieve controlled resistive switching under the electrical field. We propose to introduce interfacial dopants to shift the system Fermi energies downward so that the +2 charged oxygen vacancy can be stable. Several dipole models are presented to account for the ability of the Fermi level to shift due to the interfacial dopants. These methods are readily applicable to interface engineering for high performance devices.