Abstract:We demonstrate low energy, forming and compliance-free operation of a resistive memory obtained by the partial oxidation of a two-dimensional layered van-der-Waals semiconductor: hafnium disulfide (HfS$_2$). Semiconductor - oxide heterostructures are achieved by low temperature ($<300^{o}$C) thermal oxidation of HfS$_2$ in dry conditions, carefully controlling process parameters. The resulting HfO$_x$S$_y$/HfS$_2$ heterostructures are integrated between metal contacts, forming vertical crossbar devices. Forming-free, compliance-free resistive switching between non-volatile states is demonstrated by applying voltage pulses and measuring the current response in time. We show non-volatile memory operation with an R$_{ON}$/ R$_{OFF}$ of 102, programmable by 80ns WRITE and ERASE operations. Multiple stable resistance states are achieved by modulating pulse width and amplitude, down to 60ns, $<$ 20pJ operation. This demonstrates the capability of these devices for low - energy, fast-switching and multi-state programming. Resistance states were retained without fail at 150$^o$C over 10$^4$s, showcasing the potential of these devices for long retention times and resilience to ageing. Low-energy resistive switching measurements were repeated in vacuum (8.6 mbar) showing unchanged characteristics and no dependence of the device on surrounding oxygen or water vapour. Using a technology computer-aided design (TCAD) tool, we explore the role of the semiconductor layer in tuning the device conductance and driving gradual resistive switching in 2D HfO$_x$ - based devices.

Forming-Free and Non-linear Resistive Switching in Bilayer / Memory Devices by Interface-Induced Internal Resistance

Resistive switching in Nb-doped SrZrO3 memory films: An effective approach with a Cu modulation layer

Forming and Compliance-free Operation of Low-energy, Fast-switching HfO$_x$S$_y$/HfS$_2$ Memristors

A study of the transition between the non-polar and bipolar resistance switching mechanisms in the TiN/TiO2/Al memory

Threshold Switching in Forming-Free Anodic Memristors Grown on Hf-Nb Combinatorial Thin-Film Alloys

Reversible Transition of Volatile to Non-Volatile Resistive Switching in Cu/SiNx/ZnO/Pt Memristor

Oxide Heterostructure Resistive Memory.

Resistive Switching and Synaptic Plasticity in HfO2-based Memristors with Single-Layer and Bilayer Structures

Bipolar resistive switching based on SrTiO3/YBa 2Cu3O7 epi-layers

Interfacial reaction induced digital-to-analog resistive switching in TiO2-based memory devices

Compliance current dependent multilevel resistive switching in Titanium dioxide nanosheet based memory devices

Atomic-Layer-Deposited HfLaO-Based Resistive Switching Memories with Superior Performance

A Forming-Free Bipolar Resistive Switching in HfOx-Based Memory with a Thin Ti Cap

Enhancement Of Resistive Switching Ratio Induced By Competing Interfacial Oxygen Diffusion In Tantalum Oxide Based Memories With Metal Nitride Electrode

Resistive Switching Behaviour of A Tantalum Oxide Nanolayer Fabricated by Plasma Oxidation

Excellent Resistive Switching Properties of Atomic Layer-Deposited Al2O3/HfO2/Al2O3 Trilayer Structures for Non-Volatile Memory Applications

Dual-Functional Nonvolatile and Volatile Memory in Resistively Switching Indium Tin Oxide/HfO x Devices

Formation-free resistive switching in nanocrystalline Tellurium oxide

Tuning Analog Resistive Switching and Plasticity in Bilayer Transition Metal Oxide Based Memristive Synapses

Dual‐Functional Nonvolatile and Volatile Memory in Resistively Switching Indium Tin Oxide/HfOx Devices

Non-Linear Resistive Switching Characteristics in HFO2-Based RRAM with Low-Dimensional Material Engineered Interface