Abstract:Resistive switching devices herald a transformative technology for memory and computation, offering considerable advantages in performance and energy efficiency. Here we employ a simple and scalable material system of conductive oxide interfaces and leverage their unique properties for a new type of resistive switching device. For the first time, we demonstrate an $\rm Al_2O_3-TiO_2$ based valence-change resistive switching device, where the conductive oxide interface serves both as the back electrode and as a reservoir of defects for switching. The amorphous-polycrystalline $\rm Al_2O_3-TiO_2$ conductive interface is obtained following the technological path of simplifying the fabrication of the two-dimensional electron gases (2DEGs), making them more scalable for practical mass integration. We combine physical analysis of the device chemistry and microstructure with comprehensive electrical analysis of its switching behavior and performance. We pinpoint the origin of the resistive switching to the conductive oxide interface, which serves as the bottom electrode and as a reservoir of oxygen vacancies. The latter plays a key role in valence-change resistive switching devices. The new device, based on scalable and complementary metal-oxide-semiconductor (CMOS) technology-compatible fabrication processes, opens new design spaces towards increased tunability and simplification of the device selection challenge.

Electrical Resistance Switching in Ti Added Amorphous Siox

Electrode Effect on Resistive Switching of Ti-added Amorphous SiOx Films

Electrical Switching of Al-Doped Amorphous SiO<sub>x</sub> Thin Films

Nonpolar Electrical Switching Behavior in Cu–Si(Cu)Ox–Pt Stacks

Electrical Performance and Scalability of Pt Dispersed SiO2 Nanometallic Resistance Switch

Controllable Resistive Switching in Au/Nb:Srtio3 Microscopic Schottky Junctions

Fabrication of Silicon Highly-Rich SiO<inf>x</inf>(x&#x003C;0.75) and Its Novel Resistive Switching Behaviors

Influences Of Interface States On Resistive Switching Properties Of Tiox With Different Electrodes

Scalable $\rm Al_2O_3-TiO_2$ Conductive Oxide Interfaces as Defect Reservoirs for Resistive Switching Devices

Interface Modulation and Resistive Switching Evolution in Pt/NiO X /al2o3/n+–si Structure

Bipolar resistive switching in amorphous titanium oxide thin films

Resistive Switching Characteristics in TiO2/LaAlO3Heterostructures Sandwiched in Pt Electrodes

Endurance Enhancement Of Cu-Oxide Based Resistive Switching Memory With Al Top Electrode

Controlling resistive switching behavior in the solution processed SiO2-x device by the insertion of TiO2 nanoparticles

Resistive Switching Characteristics In Tio2/Laalo3 Heterostructures Sandwiched In Pt Electrodes

Unipolar Resistive Switching Behavior of Amorphous SrMoO4 Thin Films Deposited at Room Temperature

Anatomy of high-uniform unidirectional volatile switching behavior in SiO2/TiO2-based selection device

Resistive Switching Behavior of Ag/La0.67Sr0.33MnO3/Pt Heterostructures

Fabrication of silicon highly-rich SiOx(x<0.75) and its novel resistive switching behaviors

Multilevel Resistance Switching in Cu/Taox/Pt Structures Induced by A Coupled Mechanism

Unipolar Resistive Switching Behaviors in Amorphous Lutetium Oxide Films