Nanoscale multistate resistive switching in WO3 through scanning probe induced proton evolution
Fan Zhang,Yang Zhang,Linglong Li,Xing Mou,Huining Peng,Shengchun Shen,Meng Wang,Kunhong Xiao,Shuai-Hua Ji,Di Yi,Tianxiang Nan,Jianshi Tang,Pu Yu
DOI: https://doi.org/10.1038/s41467-023-39687-9
IF: 16.6
2023-07-04
Nature Communications
Abstract:Abstract Multistate resistive switching device emerges as a promising electronic unit for energy-efficient neuromorphic computing. Electric-field induced topotactic phase transition with ionic evolution represents an important pathway for this purpose, which, however, faces significant challenges in device scaling. This work demonstrates a convenient scanning-probe-induced proton evolution within WO 3 , driving a reversible insulator-to-metal transition (IMT) at nanoscale. Specifically, the Pt-coated scanning probe serves as an efficient hydrogen catalysis probe, leading to a hydrogen spillover across the nano junction between the probe and sample surface. A positively biased voltage drives protons into the sample, while a negative voltage extracts protons out, giving rise to a reversible manipulation on hydrogenation-induced electron doping, accompanied by a dramatic resistive switching. The precise control of the scanning probe offers the opportunity to manipulate the local conductivity at nanoscale, which is further visualized through a printed portrait encoded by local conductivity. Notably, multistate resistive switching is successfully demonstrated via successive set and reset processes. Our work highlights the probe-induced hydrogen evolution as a new direction to engineer memristor at nanoscale.
multidisciplinary sciences