Abstract:Nonvolatile memory devices based on resistive switching with fast switching speed and high density have driven extensive research that is potentially ideal for data-centric applications such as neuromorphic computing. However, due to uncontrolled filament formation, resistive random access memories (RRAM) still suffer from instability and reproducibility. In this study, NiO layer is added to the WO3-based RRAM layer to confine the conducting path for multilevel resistive switching. The current-voltage characteristics show the multilevel resistive switching, which is further confirmed by conductive atomic force microscopy measurements at nanoscale. At low voltages, few localized conducting channels are formed (in small area) within the oxide film while at the higher voltages they are distributed throughout the film and the active surface area increases from 4.5 to 75%. Kelvin probe force microscopy was employed to confirm nanoscale variations in surface potential, which are responsible for spatial current variation. Furthermore, it is found that the charge trapping/detrapping is the main governing mechanism and the conducting paths are formed gradually with increasing applied bias. We propose a strategy to achieve stable and reproducible electric field-induced multilevel memory storage which will be utilized for the development of ultrahigh density multilevel nonvolatile storage and neuromorphic computing.

Using binary resistors to achieve multilevel resistive switching in multilayer NiO/Pt nanowire arrays

Resistive switching in Nb-doped SrZrO3 memory films: An effective approach with a Cu modulation layer

Reversible Transition of Volatile to Non-Volatile Resistive Switching in Cu/SiNx/ZnO/Pt Memristor

Improvement of Resistive Switching in Nio-Based Nanowires by Inserting Pt Layers

Multilevel and Low-Power Resistive Switching Based on pn Heterojunction Memory

Nanocrystalline Si Pathway Induced Unipolar Resistive Switching Behavior from Annealed Si-rich SiNx/SiNy Multilayers

Memory and threshold resistance switching in Ni/NiO core-shell nanowires.

Electric Field‐Induced Area Scalability toward the Multilevel Resistive Switching

Ultralow Operating Voltage Nb2O5-Based Multilevel Resistive Memory with Direct Observation of Cu Conductive Filament

Realization Of Rectifying And Resistive Switching Behaviors Of Tio2 Nanorod Arrays For Nonvolatile Memory

Memory Switching and Threshold Switching in a 3D Nanoscaled NbO X System

Resistive Switching Memory: Smart Design of Resistive Switching Memory by an In Situ Current‐Induced Oxidization Process on a Single Crystalline Metallic Nanowire (Adv. Electron. Mater. 5/2021)

Smart Design of Resistive Switching Memory by an In Situ Current‐Induced Oxidization Process on a Single Crystalline Metallic Nanowire

Atomic Scale Modulation of Self‐Rectifying Resistive Switching by Interfacial Defects

Multilevel Resistive Switching in Planar Graphene/Sio2 Nanogap Structures

Evolution of Ni Nanofilaments and Electromagnetic Coupling in the Resistive Switching of Nio

Plasmonic‐Radiation‐Enhanced Metal Oxide Nanowire Heterojunctions for Controllable Multilevel Memory

Fabrication and Mechanism of High Performance Bipolar Resistive Switching Device Based on SrTiO3/NiO Stacked Heterostructure

Characteristics and Mechanism of Conduction/set Process in TiN∕ZnO∕Pt Resistance Switching Random-Access Memories

Nonvolatile resistive switching in single crystalline ZnO nanowires.

In Situ Observation of Nickel As an Oxidizable Electrode Material for the Solid-Electrolyte-Based Resistive Random Access Memory