Abstract:Resistive random-access memory (RRAM) crossbar arrays have shown significant promise as drivers of neuromorphic computing, in-memory computing, and high-density storage-class memory applications. However, leakage current through parasitic sneak paths is one of the dominant obstacles for large-scale commercial deployment of RRAM arrays. To overcome this issue without compromising on the structural simplicity, the use of inherent selectors native to switching is one of the most promising ways to reduce sneak path currents without sacrificing density associated with the simple two-electrode structure. In this study, niobium oxide (NbOx) was chosen as the resistive switching layer since it co-exhibits non-volatile memory and metal-insulator-transition selector behavior. Experimental results demonstrate abnormal phenomena in the reset process: a rapid decrease in current, followed by an increase when reset from the on state. The current conduction mechanism was examined through statistical analysis, and a conduction filament physical model was developed to explain the abnormal phenomenon. Under optimized operation conditions, non-linearity of ∼500 and fast switching speeds of 30 ns set and 50 ns reset were obtained. The switching behaviors with the intrinsic selector property make the NbOx device an attractive candidate for future memory and in-memory computing applications.

Built-in Homojunction Dominated Intrinsically Rectifying-Resistive Switching in NiO Nanodots for Selection Device-Free Memory Application

Multilevel and Low-Power Resistive Switching Based on pn Heterojunction Memory

Improved Resistive Switching Performance and Realized Electric Control of Exchange Bias in a NiO/HfO2 Bilayer Structure.

Individual Zn 2 SnO 4 -Sheathed ZnO Heterostructure Nanowires for Efficient Resistive Switching Memory Controlled by Interface States

Resistive Switches and Memories from Silicon Oxide.

Self-rectifying Resistance Switching Memory Based on a Dynamic P–n Junction

Resistive-switching Crossbar Memory Based on Ni-NiO Core-Shell Nanowires.

Memory Switching and Threshold Switching in a 3D Nanoscaled NbO X System

Self-rectifying bipolar resistive switching memory based on an iron oxide and graphene oxide hybrid

Forming-free and Self-Rectifying Resistive Switching of the Simple Pt/TaOx/n-Si Structure for Access Device-Free High-Density Memory Application.

Observing Electrochemical Switching Behaviors in Crossbar Core-Shell Ni/NiO Nanowires Memristor

Investigation on the Mechanism and Application of Nanoscale NiO Memristors

Mechanism for an enhanced resistive switching effect of bilayer NiOx/TiO2 for resistive random access memory

Self-Rectifying and Forming-Free Resistive-Switching Device for Embedded Memory Application

Flexible Nanoscale Memory Device Based on Resistive Switching in Nickel Oxide Thin Film

Atomic Scale Modulation of Self‐Rectifying Resistive Switching by Interfacial Defects

Memory and threshold resistance switching in Ni/NiO core-shell nanowires.

Investigating Selectorless Property within Niobium Devices for Storage Applications

Magnetron Sputtered Ni-Rich Nickel Oxide Nano-Films For Resistive Switching Memory Applications

Resistive Switching of SiOX with One Diode-One Resistor Nanopillar Architecture Fabricated Via Nanosphere Lithography

Unipolar Resistive Switching with Forming-Free and Self-Rectifying Effects in Cu/HfO2/n-Si Devices