Zhong Sun,Linlin Wei,Ce Feng,Peixian Miao,Meiqi Guo,Huaixin Yang,Jianqi Li,Yonggang Zhao
Abstract:The intrinsically rectifying-resistive switching (IR-RS) has been regarded as an effective way to address the crosstalk issue, due to the Schottky diodes formed at the metal/oxide interfaces in the ON states to suppress the sneak current at reverse biases. In this letter, we report for the first time another type of IR-RS that is related to the built-in homojunction. The IR-RS study was usually limited to macroscopic samples with micron-order pad-type electrodes, while this work is on NiO nanodots fabricated with ultrathin anodic-aluminum-oxide templates and acting as nanoscaled analogs of real devices. The NiO nanodots show high storage density and high uniformity, and the IR-RS behaviors are of good device performances in terms of retention, endurance, switching ratio and rectification ratio. The feasibility of the IR-RS for selection device-free memory application has been demonstrated, by calculating the maximum crossbar array size under the worst-case scenario to be 3 Mbit.
What problem does this paper attempt to address?
The main problem that this paper attempts to solve is the crosstalk problem in resistive random - access memory (RRAM). Specifically, by studying the intrinsic rectification - resistance - switching (IR - RS) behavior of NiO nanodots, the author proposes a new solution, that is, using the built - in homojunction to achieve memory applications without selection devices.
### Problem Background
As a promising next - generation non - volatile memory, RRAM has attracted much attention due to its simple structure, high scalability, and excellent performance. However, in the cross - bar array structure, when the cell size is reduced to the minimum feature size of \(4F^2\), RRAM will face the so - called "crosstalk" problem. Crosstalk refers to the interference of the current of the selected cell by the leakage current of the unselected cells during reading, which will affect the reliability and performance of the memory.
To solve this problem, the common method is to integrate selection devices (such as transistors, diodes or selectors), but this increases the complexity and is not conducive to the miniaturization of devices. Another method is to use complementary resistance switching (CRS), but its destructive read operation limits its application. In recent years, the intrinsic rectification - resistance - switching (IR - RS) has been considered as an effective solution because it can suppress the leakage current under reverse bias by forming a Schottky diode at the metal/oxide interface.
### Core Contributions of the Paper
In this work, the author reports for the first time the IR - RS behavior dominated by the built - in homojunction. Different from the previous IR - RS mechanisms that mainly rely on the interface Schottky diode, this new mechanism utilizes the oxygen ion migration inside the NiO nanodots to form a p - p homojunction, thereby achieving rectification characteristics. Specifically:
1. **Materials and Structures**: The author uses an anodic aluminum oxide (AAO) template to prepare high - density and uniform NiO nanodots and grows them by pulsed - laser deposition (PLD) technology.
2. **Electrical Properties**: NiO nanodots exhibit two types of IR - RS behaviors: self - rectifying resistance - switching (self - rectifying RS) and switchable diode - like resistance - switching (switchable diode - like RS). These behaviors have good retention, durability, on - off ratio and rectification ratio, which are suitable for memory applications without selection devices.
3. **Mechanism Analysis**: By comparing the electrical behaviors in air and vacuum environments, the author finds that oxygen ion migration plays a key role in IR - RS. Specifically, under a forward voltage, oxygen ions migrate downward, resulting in an increase in the hole concentration in the region near the Pt bottom electrode and the formation of a p - p homojunction; under a negative voltage, oxygen ions migrate upward, causing the homojunction to disappear or reverse, thereby making the device return to an insulating state or form a negative - direction diode.
### Application Prospects
Based on the above research results, the author verifies the feasibility of this IR - RS mechanism in practical memory applications by calculating the maximum cross - bar array scale. The results show that even in the worst - case scenario, a cross - bar array scale of 3 Mbit can be achieved, indicating that this mechanism has potential application value.
In conclusion, this paper provides a novel and effective solution to solve the crosstalk problem in RRAM by introducing the IR - RS mechanism dominated by the built - in homojunction.