Abstract:Resistive random-access memory (RRAM) is a candidate next generation nonvolatile memory due to its high access speed, high density and ease of fabrication. Especially, cross-point-access allows cross-bar arrays that lead to high-density cells in a two-dimensional planar structure. Use of such designs could be compatible with the aggressive scaling down of memory devices, but existing methods such as optical or e-beam lithographic approaches are too complicated. One-dimensional inorganic nanowires (i-NWs) are regarded as ideal components of nanoelectronics to circumvent the limitations of conventional lithographic approaches. However, post-growth alignment of these i-NWs precisely on a large area with individual control is still a difficult challenge. Here, we report a simple, inexpensive, and rapid method to fabricate two-dimensional arrays of perpendicularly-aligned, individually-conductive Cu-NWs with a nanometer-scale CuxO layer sandwiched at each cross point, by using an inorganic-nanowire-digital-alignment technique (INDAT) and a one-step reduction process. In this approach, the oxide layer is self-formed and patterned, so conventional deposition and lithography are not necessary. INDAT eliminates the difficulties of alignment and scalable fabrication that are encountered when using currently-available techniques that use inorganic nanowires. This simple process facilitates fabrication of cross-point nonvolatile memristor arrays. Fabricated arrays had reproducible resistive switching behavior, high on/off current ratio (Ion/Ioff) ~10 6 and extensive cycling endurance. This is the first report of memristors with the resistive switching oxide layer self-formed, self-patterned and self-positioned; we envision that the new features of the technique will provide great opportunities for future nano-electronic circuits.

Resistive-switching Crossbar Memory Based on Ni-NiO Core-Shell Nanowires.

Nanowire Switches: Resistive‐Switching Crossbar Memory Based on Ni–NiO Core–Shell Nanowires (small 20/2011)

Observing Electrochemical Switching Behaviors in Crossbar Core-Shell Ni/NiO Nanowires Memristor

Smart Design of Resistive Switching Memory by an In Situ Current‐Induced Oxidization Process on a Single Crystalline Metallic Nanowire

Highly Scalable Resistive Switching Memory in Metal Nanowire Crossbar Arrays Fabricated by Electron Beam Lithography

Ni/NiO/HfO2 Core/Multishell Nanowire ReRAM Devices with Excellent Resistive Switching Properties

Resistive Random Access Memory Cells with a Bilayer TiO2/SiOX Insulating Stack for Simultaneous Filamentary and Distributed Resistive Switching

Complementary Resistive Switching in Niobium Oxide-Based Resistive Memory Devices

Fabrication of Cross-Shaped Cu-nanowire Resistive Memory Devices Using a Rapid, Scalable, and Designable Inorganic-Nanowire-digital-alignment Technique (conference Presentation)

One-step Fabrication of CdS:Mo–CdMoO4core–shell Nanoribbons for Nonvolatile Memory Devices with High Resistance Switching

Resistive Switching Device Based on Core-shell Ag@SiO2 Nanowire Networks

Nanoporous Silicon Oxide Memory

Nanoscale Memory Cell Based on a Nanoelectromechanical Switched Capacitor

Memory and threshold resistance switching in Ni/NiO core-shell nanowires.

High Performance Bipolar Resistive Switching Memory Devices Based on Zn2SnO4 Nanowires

Built-in Homojunction Dominated Intrinsically Rectifying-Resistive Switching in NiO Nanodots for Selection Device-Free Memory Application

Purely electronic nanometallic resistance switching random-access memory

Memory device based on a nano-granulars and nano-worms structured MoS 2 active layer: The origin of resistive switching characteristics

Ultralow Set Voltage and Enhanced Switching Reliability for Resistive Random-Access Memory Enabled by an Electrodeposited Nanocone Array.

Electric Field‐Induced Area Scalability toward the Multilevel Resistive Switching

Reliable Memristive Switching Empowered by Ag/NiO/W ReRAM Configuration for Multi‐Level Non‐Volatile Memory Applications