Abstract:The demand for increased information storage densities has pushed silicon technology to its limits and led to a focus on research on novel materials and device structures, such as magnetoresistive random access memory1,2,3 and carbon nanotube field-effect transistors4,5,6,7,8,9, for ultra-large-scale integrated memory10. Electromechanical devices are suitable for memory applications because of their excellent ‘ON–OFF’ ratios and fast switching characteristics, but they involve larger cells and more complex fabrication processes than silicon-based arrangements11,12,13. Nanoelectromechanical devices based on carbon nanotubes have been reported previously14,15,16,17, but it is still not possible to control the number and spatial location of nanotubes over large areas with the precision needed for the production of integrated circuits. Here we report a novel nanoelectromechanical switched capacitor structure based on vertically aligned multiwalled carbon nanotubes in which the mechanical movement of a nanotube relative to a carbon nanotube based capacitor defines ‘ON’ and ‘OFF’ states. The carbon nanotubes are grown with controlled dimensions at pre-defined locations on a silicon substrate in a process that could be made compatible with existing silicon technology, and the vertical orientation allows for a significant decrease in cell area over conventional devices. We have written data to the structure and it should be possible to read data with standard dynamic random access memory sensing circuitry. Simulations suggest that the use of high-k dielectrics in the capacitors will increase the capacitance to the levels needed for dynamic random access memory applications.

Nanowire Switches: Resistive‐Switching Crossbar Memory Based on Ni–NiO Core–Shell Nanowires (small 20/2011)

Resistive-switching Crossbar Memory Based on Ni-NiO Core-Shell Nanowires.

Memory and threshold resistance switching in Ni/NiO core-shell nanowires.

Smart Design of Resistive Switching Memory by an In Situ Current‐Induced Oxidization Process on a Single Crystalline Metallic Nanowire

Current Controlled Magnetization Switching in Cylindrical Nanowires for High-Density 3D Memory Applications

Nanoscale Memory Cell Based on a Nanoelectromechanical Switched Capacitor

Memory device based on a nano-granulars and nano-worms structured MoS 2 active layer: The origin of resistive switching characteristics

Nonvolatile resistive switching in single crystalline ZnO nanowires.

Using binary resistors to achieve multilevel resistive switching in multilayer NiO/Pt nanowire arrays

Memory Switching and Threshold Switching in a 3D Nanoscaled NbO X System

In-Plane Ferroelectric Domain Wall Memory with Embedded Electrodes on LiNbO3 Thin Films.

Ferroelectric-carbon Nanotube Memory Devices.

In-Plane Bistable Nanowire For Memory Devices

Built-in Homojunction Dominated Intrinsically Rectifying-Resistive Switching in NiO Nanodots for Selection Device-Free Memory Application

Self‐Assembled NiO Nanocrystal Arrays As Memristive Elements

Bi-layer Resistive Switching Memory Using Aligned SWCNTs As Electrodes

Evolution of Ni Nanofilaments and Electromagnetic Coupling in the Resistive Switching of Nio

Highly Scalable Resistive Switching Memory in Metal Nanowire Crossbar Arrays Fabricated by Electron Beam Lithography

Resistive Switching of Crossbar Memories with Carbon Nanotube Electrodes

Direct Observation of Conducting Nano Filaments in BMO Resistive Switching Memory

In Situ Observation of Nickel As an Oxidizable Electrode Material for the Solid-Electrolyte-Based Resistive Random Access Memory