Abstract:The exceptional resistive switching characteristics of complex oxides make them promising for use in memristors to mimic biological synapses in neuromorphic computing architectures in an energy-efficient manner. Specifically, the electrical conductance of complex oxides can be controllable switched across multiple orders of magnitude by either (a) electroforming a conduction channel (e.g., in tungsten oxide), or (b) inducing Mott-Hubbard transition (e.g., in rare-earth nickelates)– both via controlled migration of defects (such as oxygen vacancies) under applied bias. However, development of accurate neuromorphic computers (i.e., low variability) remains extremely challenging due to a lack of fundamental understanding of the atomic-scale processes that underlie migration and spatiotemporal evolution of oxygen vacancies (and other extended defects) over nano-to-mesoscopic length/timescales under applied electric field. Here, we demonstrate that a synergistic integration of density functional theory (DFT) calculation, ab initio /classical molecular dynamics (AIMD/CMD) simulations, precision synthesis, and multi-modal X-ray imaging experiments provides an effective route to address this knowledge gap. First, we use a combination of multi-modal X-ray imaging (with chemical/structural sensitivity) and CMD simulations to show that the intrinsic randomness of electroforming process in tungsten-oxide memristors can be minimized by careful introduction of sharp protrusions in the electrode gap. We find that sharp protrusions confine the electric field, which yields a reproducible distribution of oxygen vacancies over several switching cycles; and reliably form conduction channel in a specific location in the memristor. Next, we employed a large dataset of data from DFT calculations and short AIMD trajectories to develop deep neural network (DNN) models to accurately capture energetics, atomic forces, atomic charges, and maximally localized Wannier centers in rare-earth nickelates (RNO). CMD simulations based on these newly developed DNNs show that metal-insulator transition (MIT) in RNO occurs via a local structural distortion in the extended nickel structure, which facilitates the electronic instability and causes a sharp concomitant Ni-O bond and Ni-charge disproportion with decreasing temperature; this MIT is also strongly influenced by applied pressure and rare-earth ion. Furthermore, DFT calculations reveal the correlations the oxygen stoichiometry, OV distribution (including different NiO x motifs), OV transport, and electron-lattice coupling in perovskite nickelates. These results will be discussed in the context of controlling defect-induced transitions to design accurate and reliable memristive devices for neuromorphic computing platforms that are vital for artificial intelligence technologies.

Investigation on the Mechanism and Application of Nanoscale NiO Memristors

Deterministic Role of Concentration Surplus of Cation Vacancy over Anion Vacancy in Bipolar Memristive NiO

Improved resistive switching performance and mechanism analysis of MoO 3 nanorods based memristors

Built-in Homojunction Dominated Intrinsically Rectifying-Resistive Switching in NiO Nanodots for Selection Device-Free Memory Application

Memory and threshold resistance switching in Ni/NiO core-shell nanowires.

Evolution of Ni Nanofilaments and Electromagnetic Coupling in the Resistive Switching of Nio

In-situ Study of Understanding the Resistive Switching Mechanisms of Nitride-based Memristor Devices

Realization of volatile and non-volatile resistive switching with N-TiO2 nanorod arrays based memristive devices through compositional control

Evolution Between CRS and NRS Behaviors in MnO 2 @TiO 2 Nanocomposite Based Memristor for Multi-factors-regulated Memory Applications

Controllable resistive switching behaviors in heteroepitaxial LaNiO3/Nb:SrTiO3 Schottky junctions through oxygen vacancies engineering

Tuning oxygen vacancy in LiNbO 3 single crystals for prominent memristive and dielectric behaviors

Nanoscale-Thick La 0.7 Sr 0.3 MnO 3 Films for Memristor Devices with Negative Differential Resistance-Coupled Resistive Switching Behavior

In Situ Observation of Nickel As an Oxidizable Electrode Material for the Solid-Electrolyte-Based Resistive Random Access Memory

Evolution between CRS and NRS behaviors in MnO2@TiO2 nanocomposite based memristor for multi-factors-regulated memory applications

Fatigue of NbOx-Based Locally Active Memristors—Part II: Mechanisms and Modeling

Understanding Atomic-Scale Dynamics of Defects in Complex Oxides for Memristive Devices

Fatigue of NbOx-Based Locally Active Memristors—Part I: Experimental Characteristics

Controllable Resistive Switching Behaviors in Heteroepitaxial LaNiO3/Nb:SrTiO3Schottky Junctions Through Oxygen Vacancies Engineering.

Fatigue of NbO x -Based Locally Active Memristors—Part I: Experimental Characteristics

High Performance Bipolar Resistive Switching Memory Devices Based on Zn2SnO4 Nanowires

Gradual conductance modulation by defect reorganization in amorphous oxide memristors