Abstract:The exceptional resistive switching characteristics of complex oxides make them promising for use in memristors to mimic biological synapses in neuromorphic computing architectures in an energy-efficient manner. Specifically, the electrical conductance of complex oxides can be controllable switched across multiple orders of magnitude by either (a) electroforming a conduction channel (e.g., in tungsten oxide), or (b) inducing Mott-Hubbard transition (e.g., in rare-earth nickelates)– both via controlled migration of defects (such as oxygen vacancies) under applied bias. However, development of accurate neuromorphic computers (i.e., low variability) remains extremely challenging due to a lack of fundamental understanding of the atomic-scale processes that underlie migration and spatiotemporal evolution of oxygen vacancies (and other extended defects) over nano-to-mesoscopic length/timescales under applied electric field. Here, we demonstrate that a synergistic integration of density functional theory (DFT) calculation, ab initio /classical molecular dynamics (AIMD/CMD) simulations, precision synthesis, and multi-modal X-ray imaging experiments provides an effective route to address this knowledge gap. First, we use a combination of multi-modal X-ray imaging (with chemical/structural sensitivity) and CMD simulations to show that the intrinsic randomness of electroforming process in tungsten-oxide memristors can be minimized by careful introduction of sharp protrusions in the electrode gap. We find that sharp protrusions confine the electric field, which yields a reproducible distribution of oxygen vacancies over several switching cycles; and reliably form conduction channel in a specific location in the memristor. Next, we employed a large dataset of data from DFT calculations and short AIMD trajectories to develop deep neural network (DNN) models to accurately capture energetics, atomic forces, atomic charges, and maximally localized Wannier centers in rare-earth nickelates (RNO). CMD simulations based on these newly developed DNNs show that metal-insulator transition (MIT) in RNO occurs via a local structural distortion in the extended nickel structure, which facilitates the electronic instability and causes a sharp concomitant Ni-O bond and Ni-charge disproportion with decreasing temperature; this MIT is also strongly influenced by applied pressure and rare-earth ion. Furthermore, DFT calculations reveal the correlations the oxygen stoichiometry, OV distribution (including different NiO x motifs), OV transport, and electron-lattice coupling in perovskite nickelates. These results will be discussed in the context of controlling defect-induced transitions to design accurate and reliable memristive devices for neuromorphic computing platforms that are vital for artificial intelligence technologies.

Tuning oxygen vacancy in LiNbO 3 single crystals for prominent memristive and dielectric behaviors

Metastable Oxygen Vacancy Ordering State and Improved Memristive Behavior in TiO2 Crystals.

Relaxor- and Phase-Transition-like Behaviors in ZnO Single Crystals at High Temperatures

Controllable resistive switching behaviors in heteroepitaxial LaNiO3/Nb:SrTiO3 Schottky junctions through oxygen vacancies engineering

Controllable Resistive Switching Behaviors in Heteroepitaxial LaNiO3/Nb:SrTiO3Schottky Junctions Through Oxygen Vacancies Engineering.

Regulation of oxygen vacancy on behaviors of memristors based on amorphous ZnTiSnO films

Gradual conductance modulation by defect reorganization in amorphous oxide memristors

Correlation Between Evolution of Resistive Switching and Oxygen Vacancy Configuration in La0.5ca0.5mno3 Based Memristive Devices

Tunable Digital-to-analog Switching in Nb2O5-based Resistance Switching Devices by Oxygen Vacancy Engineering

Deterministic Role of Concentration Surplus of Cation Vacancy over Anion Vacancy in Bipolar Memristive NiO

New Phase Transition Associated with Configuration of Oxygen Vacancies in Vo1.965 Nanometer Ceramics

Memristive Behavior Enabled by Amorphous–Crystalline 2D Oxide Heterostructure

Investigation on the Mechanism and Application of Nanoscale NiO Memristors

Oxygen vacancies dynamics in redox-based interfaces: Tailoring the memristive response

Oxygen-Valve Formed in Cobaltite-Based Heterostructures by Ionic Liquid and Ferroelectric Dual-Gating.

The fabrication of LiNbO3 memristors for electronic synapses using oxygen annealing

In Situ TEM Studies of Oxygen Vacancy Migration for Electrically Induced Resistance Change Effect in Cerium Oxides.

Oxygen-vacancy-induced Memory Effect and Large Recoverable Strain in a Barium Titanate Single Crystal

Revealing the Effects of Trace Oxygen Vacancies on Improper Ferroelectric Manganite with in Situ Biasing

Understanding Atomic-Scale Dynamics of Defects in Complex Oxides for Memristive Devices

Real-time in situ optical tracking of oxygen vacancy migration in memristors