Abstract:The exceptional resistive switching characteristics of complex oxides make them promising for use in memristors to mimic biological synapses in neuromorphic computing architectures in an energy-efficient manner. Specifically, the electrical conductance of complex oxides can be controllable switched across multiple orders of magnitude by either (a) electroforming a conduction channel (e.g., in tungsten oxide), or (b) inducing Mott-Hubbard transition (e.g., in rare-earth nickelates)– both via controlled migration of defects (such as oxygen vacancies) under applied bias. However, development of accurate neuromorphic computers (i.e., low variability) remains extremely challenging due to a lack of fundamental understanding of the atomic-scale processes that underlie migration and spatiotemporal evolution of oxygen vacancies (and other extended defects) over nano-to-mesoscopic length/timescales under applied electric field. Here, we demonstrate that a synergistic integration of density functional theory (DFT) calculation, ab initio /classical molecular dynamics (AIMD/CMD) simulations, precision synthesis, and multi-modal X-ray imaging experiments provides an effective route to address this knowledge gap. First, we use a combination of multi-modal X-ray imaging (with chemical/structural sensitivity) and CMD simulations to show that the intrinsic randomness of electroforming process in tungsten-oxide memristors can be minimized by careful introduction of sharp protrusions in the electrode gap. We find that sharp protrusions confine the electric field, which yields a reproducible distribution of oxygen vacancies over several switching cycles; and reliably form conduction channel in a specific location in the memristor. Next, we employed a large dataset of data from DFT calculations and short AIMD trajectories to develop deep neural network (DNN) models to accurately capture energetics, atomic forces, atomic charges, and maximally localized Wannier centers in rare-earth nickelates (RNO). CMD simulations based on these newly developed DNNs show that metal-insulator transition (MIT) in RNO occurs via a local structural distortion in the extended nickel structure, which facilitates the electronic instability and causes a sharp concomitant Ni-O bond and Ni-charge disproportion with decreasing temperature; this MIT is also strongly influenced by applied pressure and rare-earth ion. Furthermore, DFT calculations reveal the correlations the oxygen stoichiometry, OV distribution (including different NiO x motifs), OV transport, and electron-lattice coupling in perovskite nickelates. These results will be discussed in the context of controlling defect-induced transitions to design accurate and reliable memristive devices for neuromorphic computing platforms that are vital for artificial intelligence technologies.

Fatigue of NbOx-Based Locally Active Memristors—Part II: Mechanisms and Modeling

Fatigue of NbOx-Based Locally Active Memristors—Part I: Experimental Characteristics

Fatigue of NbO x -Based Locally Active Memristors—Part I: Experimental Characteristics

Microscopic Modeling and Optimization of NbOx Mott Memristor for Artificial Neuron Applications

NbO 2 -Based Locally Active Memristors: from Physical Mechanisms to Performance Optimization

Noise Spectroscopy and Electrical Transport in NbO2 Memristors with Dual Resistive Switching

Simple Modelling of S‐type NbOx Locally Active Memristor

Dual functionality of NbOx memristors for synaptic and neuronal emulations in advanced neuromorphic systems

Finite element modeling of resistive switching in Nb2O5-based memory device

Neuronal Firing Characteristics in the NbO2 Based Mott Memristor

Modeling and Synaptic Behaviors of a WOx‐based Memristor with Oxygen Vacancy Conductive Mechanism

Effect of Temperature on Electrical Characteristics of NbOx Volatile Memristor

High-Yield and Uniform NbOx-Based Threshold Switching Devices for Neuron Applications

A model of TaOx threshold switching memristor for neuromorphic computing

Improved the Voltage Hysteresis Window and Endurance in NbOx Threshold Device by Ti Doping

Understanding Composite Negative Differential Resistance in Niobium Oxide Memristors

Improved Performance of NbOx Resistive Switching Memory by In-Situ N Doping

High-Yield and Uniform NbO x -Based Threshold Switching Devices for Neuron Applications

Experimental Demonstration of Coplanar NbO x Mott Memristors for Spiking Neurons

Understanding Atomic-Scale Dynamics of Defects in Complex Oxides for Memristive Devices

Physical Mechanisms and Enhancement of Endurance Degradation of SiOx:Ag-based Volatile Memristors