Noise Spectroscopy and Electrical Transport in NbO2 Memristors with Dual Resistive Switching

Nitin Kumar,Jong E. Han,Karsten Beckmann,Nathaniel Cady,G. Sambandamurthy

2024-11-11

Abstract:Negative differential resistance (NDR) behavior observed in several transition metal oxides is crucial for developing next-generation memory devices and neuromorphic computing systems. NbO2-based memristors exhibit two regions of NDR at room temperature, making them promising candidates for such applications. Despite this potential, the physical mechanisms behind the onset and the ability to engineer these NDR regions remain unclear, hindering further development of these devices for applications. This study employed electrical transport and ultra-low frequency noise spectroscopy measurements to investigate two distinct NDR phenomena in nanoscale thin films of NbO2. By analyzing the residual current fluctuations as a function of time, we find spatially inhomogeneous and non-linear conduction near NDR-1 and a two-state switching near NDR-2, leading to an insulator-to-metal (IMT) transition. The power spectral density of the residual fluctuations exhibits significantly elevated noise magnitudes around both NDR regions, providing insights into physical mechanisms and device size scaling for electronic applications. A simple theoretical model, based on the dimerization of correlated insulators, offers a comprehensive explanation of observed transport and noise behaviors near NDRs, affirming the presence of non-linear conduction followed by an IMT connecting macroscopic device response to transport signatures at atomic level.

Mesoscale and Nanoscale Physics,Materials Science,Strongly Correlated Electrons

What problem does this paper attempt to address?

### What problems does this paper attempt to solve?

This paper aims to solve the physical mechanism behind the negative differential resistance (NDR) phenomenon in NbO₂ - based memristors and its potential in multi - level storage and brain - like computing applications. Specifically, the paper mainly focuses on the following issues:

1. **Understanding the physical mechanism of the NDR phenomenon**:
- NbO₂ - based memristors exhibit two NDR regions at room temperature, but the specific physical mechanisms of these NDR phenomena are still unclear.
- Researchers hope to reveal the causes of these two NDR regions through electrical transport measurements and ultra - low - frequency noise spectroscopy measurements.

2. **Exploring the relationship between NDR and insulator - metal transition (IMT)**:
- NDR - 1 is considered to be caused by spatially inhomogeneous conduction, manifested as random telegraph noise (RTN), while NDR - 2 is related to IMT and involves Nb - Nb dimerization.
- The paper verifies these hypotheses through theoretical models and experimental data and explores the microscopic mechanism of IMT.

3. **Enhancing the application potential of NbO₂ - based devices in multi - level storage and brain - like computing**:
- The NDR phenomenon can be used to achieve multi - level storage, thereby increasing the amount of data per storage unit and improving the area efficiency.
- Researchers show how to use the NDR phenomenon to achieve stable two - state or multi - state switching by controlling current and voltage, providing new ideas for multi - level storage.

4. **Establishing the connection between macroscopic response and atomic - scale transport characteristics**:
- By analyzing the power spectral density (PSD) and current - voltage characteristics, researchers establish the connection from the atomic scale to the macroscopic device response.
- This helps to better understand and optimize the performance of NbO₂ - based devices and promotes their application in next - generation memory and brain - like computing systems.

### Formula representation

The formulas involved in the paper include the Hamiltonian describing the electron transport behavior:

\[
H_{\text{latt}}=\sum_{\alpha}\left[-t\sum_{\langle ij\rangle}(- 1)^{\alpha}(c^{\dagger}_{\alpha i}c_{\alpha j}+c^{\dagger}_{\alpha j}c_{\alpha i})+\sum_i[(-1)^{\alpha}(2t-\mu)-Ex_i]c^{\dagger}_{\alpha i}c_{\alpha i}\right]+\sum_i[\Delta(c^{\dagger}_{1i}c_{2i}+c^{\dagger}_{2i}c_{1i})+\frac{\Delta^2}{2U}]
\]

where:
- \( c^{\dagger}_{\alpha i} \) and \( c_{\alpha i} \) are the electron creation and annihilation operators at position \( i \) in band \( \alpha \), respectively.
- \( t \) is the tight - binding parameter.
- \( \mu \) is the chemical potential.
- \( E \) is the applied electric field.
- \( \Delta \) is the dimerization order parameter.
- \( U \) is the interaction parameter.

These formulas help to explain the microscopic mechanism of the NDR phenomenon and provide theoretical support for the experimental results.