Abstract:The resistive switching response of two terminal metal/oxide/metal devices depends on the stoichiometry of the oxide film, and this is commonly controlled by using a reactive metal electrode to reduce the oxide layer. Here, we investigate compositional and structural changes induced in Nb/Nb2O5 bilayers by thermal annealing at temperatures in the range of 573-973 K and its effect on the volatile threshold switching characteristics of Nb/Nb2O5/Pt devices. Changes in the stoichiometry of the Nb and Nb2O5 films are determined by Rutherford backscattering spectrometry and energy-dispersive X-ray (EDX) mapping of sample cross sections, while the structure of the films is determined by X-ray diffraction, Raman spectroscopy, and transmission electron microscopy (TEM). Such analysis shows that the composition of the Nb and Nb2O5 layers is homogenized by interdiffusion at temperatures less than the crystallization temperature (i.e., >773 K) but that this effectively ceases once the films crystallize. This is explained by comparison with the predictions of a simple diffusion model which shows that the compositional changes are dominated by oxygen diffusion in the amorphous oxide, which is much faster than that in the crystalline phases. We further show that these compositional and structural changes have a significant effect on the electroforming and threshold switching characteristics of the devices, the most significant being a marked increase in their reliability and endurance after crystallization of the oxide films. Finally, we examine the effect of annealing on the quasistatic negative differential resistance characteristics and oscillator dynamics of devices and use a lumped element model to show that this is dominated by changes in the device capacitance resulting from interdiffusion.

Thermal Conductivity of Amorphous NbOx Thin Films and Its Effect on Volatile Memristive Switching

Effect of Interdiffusion and Crystallization on Threshold Switching Characteristics of Nb/Nb2O5/Pt Memristors

High Spatial Resolution Thermal Mapping of Volatile Switching in NbOx-Based Memristor Using In Situ Scanning Thermal Microscopy.

Diffuson-driven Ultralow Thermal Conductivity in Amorphous Nb2O5 Thin Films

Electrically-driven IMT and volatile memristor behavior in NdNiO 3 films

Resistive switching properties of Mn-doped amorphous Nb2O5 thin films for resistive RAM application

Noise Spectroscopy and Electrical Transport in NbO2 Memristors with Dual Resistive Switching

High Frequency Response of Volatile Memristors

Substrate Dependent Resistive Switching in Amorphous-HfOx Memristors: An Experimental and Computational Investigation

Memristive effect in niobium oxide thin films obtained by the pulsed laser deposition

Morphology control of volatile resistive switching in La0.67Sr0.33MnO3 thin films on LaAlO3 (001)

Measurement of the Crystallization and Phase Transition of Niobium Dioxide Thin-Films for Neuromorphic Computing Applications Using a Tube Furnace Optical Transmission System

Enhancement in neuromorphic NbO2 memristive device switching at cryogenic temperatures

Electronic vs. phononic thermal transport in Cr-doped V2O3 thin films across the Mott transition

Non-Thermal Resistive Switching in Mott Insulators

Bipolar resistive switching characteristics of atomic layer deposited Nb2O5 thin films for nonvolatile memory application

Growth and Characterization of Polycrystalline NbO2 Thin Films on Crystalline and Amorphous Substrates

Neuronal Firing Characteristics in the NbO2 Based Mott Memristor

Direct Observation of Conducting Nano Filaments in BMO Resistive Switching Memory

Novel hypostasis of old materials in oxide electronics: metal oxides for resistive random access memory applications

Non-thermal resistive switching in Mott insulator nanowires