Abstract:Resistive-switching -- the current-/voltage-induced electrical resistance change -- is at the core of memristive devices, which play an essential role in the emerging field of neuromorphic computing. This study is about resistive switching in a Mott-insulator, which undergoes a thermally driven metal-to-insulator transition. Two distinct switching mechanisms were reported for such a system: electric-field-driven resistive switching and electrothermal resistive switching. The latter results from an instability caused by Joule heating. Here, we present the visualization of the reversible resistive switching in a planar V$_2$O$_3$ thin-film device using high-resolution wide-field microscopy in combination with electric transport measurements. We investigate the interaction of the electrothermal instability with the strain-induced spontaneous phase-separation in the V$_2$O$_3$ thin film at the Mott-transition. The photomicrographs show the formation of a narrow metallic filament with a minimum width $\lesssim$ 500\,nm. Although the filament formation and the overall shape of the current-voltage characteristics (IVCs) are typical of an electrothermal breakdown, we also observe atypical effects like oblique filaments, filament splitting, and hysteretic IVCs with sawtooth-like jumps at high currents in the low-resistance regime. We were able to reproduce the experimental results in a numerical model based on a two-dimensional resistor network. This model demonstrates that resistive switching, in this case, is indeed electrothermal and that the intrinsic heterogeneity is responsible for the atypical effects. This heterogeneity is strongly influenced by strain, thereby establishing a link between switching dynamics and structural properties.

Non-Thermal Resistive Switching in Mott Insulators

Non-thermal resistive switching in Mott insulator nanowires

Optical imaging of strain-mediated phase coexistence during electrothermal switching in a Mott insulator

Non thermal and purely electronic resistive transition in narrow gap Mott insulators

Mott resistive switching initiated by topological defects

Electric-Field-Induced Resistive Switching in a Family of Mott Insulators : towards Non-Volatile Mott-RRAM Memories

Non-thermal light-assisted resistance collapse in a V$_2$O$_3$-based Mott-insulator device

Room temperature Mott transistor based on resistive switching in disordered V2O3 films grown on Si

Direct observation of the electrically triggered Insulator-Metal transition in V3O5 far below the transition temperature

Mott materials: unsuccessful metals with a bright future

Electric field induced Mott-insulator to metal transition and memristive behaviour in epitaxial V$_2$O$_3$ thin film

Energy-adaptive resistive switching with controllable thresholds in insulator–metal transition

Universal non-polar switching in carbon-doped transition metal oxides (TMOs) and post TMOs

Thermoelectric Seebeck Effect in Oxide-Based Resistive Switching Memory.

Non-volatile multi-state electrothermal resistive switching in a strongly correlated insulator thin-film device

Current driven insulator-to-metal transition without Mott breakdown in Ca$_2$RuO$_4$

Quantum Sensing of Insulator-to-Metal Transitions in a Mott Insulator

Piezo strain–controlled phase transition in single-crystalline Mott switches for threshold-manipulated leaky integrate-and-fire neurons

Voltage Control of Metal-Insulator Transition and Non-Volatile Ferroelastic Switching of Resistance in VOx/PMN-PT Heterostructures.

A review of Mott insulator in memristors: The materials, characteristics, applications for future computing systems and neuromorphic computing

Electrically driven insulator-to-metal transition in a correlated insulator: Electronic mechanism and thermal description