Anita Verma,Denis Golež,Oleg Yu. Gorobtsov,Kelson Kaj,Ryan Russell,Jeffrey Z. Kaaret,Erik Lamb,Guru Khalsa,Hari P Nair,Yifei Sun,Ryan Bouck,Nathaniel Schreiber,Jacob P. Ruf,Varun Ramaprasad,Yuya Kubota,Tadashi Togashi,Vladimir A. Stoica,Hari Padmanabhan,John W. Freeland,Nicole A. Benedek,Oleg Shpyrko,John W. Harter,Richard D. Averitt,Darrell G. Schlom,Kyle M. Shen,Andrew J. Millis,Andrej Singer

Abstract:Technology moves towards ever faster switching between different electronic and magnetic states of matter. Manipulating properties at terahertz rates requires accessing the intrinsic timescales of electrons (femtoseconds) and associated phonons (10s of femtoseconds to few picoseconds), which is possible with short-pulse photoexcitation. Yet, in many Mott insulators, the electronic transition is accompanied by the nucleation and growth of percolating domains of the changed lattice structure, leading to empirical time scales dominated by slow coarsening dynamics. Here, we use time-resolved X-ray diffraction and reflectivity measurements to investigate the photoinduced insulator-to-metal transition in an epitaxially strained thin film Mott insulator Ca2RuO4. The dynamical transition occurs without observable domain formation and coarsening effects, allowing the study of the intrinsic electronic and lattice dynamics. Above a fluence threshold, the initial electronic excitation drives a fast lattice rearrangement, followed by a slower electronic evolution into a metastable non-equilibrium state. Microscopic calculations based on time-dependent dynamical mean-field theory and semiclassical lattice dynamics within a recently published equilibrium energy landscape picture explain the threshold-behavior and elucidate the delayed onset of the electronic phase transition in terms of kinematic constraints on recombination. Analysis of satellite scattering peaks indicates the persistence of a strain-induced nano-texture in the photoexcited film. This work highlights the importance of combined electronic and structural studies to unravel the physics of dynamic transitions and elucidates the role of strain in tuning the timescales of photoinduced processes.

Optical imaging of strain-mediated phase coexistence during electrothermal switching in a Mott insulator

Non-Thermal Resistive Switching in Mott Insulators

Mott resistive switching initiated by topological defects

Non-thermal resistive switching in Mott insulator nanowires

Non-volatile multi-state electrothermal resistive switching in a strongly correlated insulator thin-film device

Non-thermal light-assisted resistance collapse in a V$_2$O$_3$-based Mott-insulator device

X-ray Nano-imaging of a Heterogeneous Structural Phase Transition in V2O3

Electric field induced Mott-insulator to metal transition and memristive behaviour in epitaxial V$_2$O$_3$ thin film

Non thermal and purely electronic resistive transition in narrow gap Mott insulators

Direct observation of the electrically triggered Insulator-Metal transition in V3O5 far below the transition temperature

Picosecond volume expansion drives a later-time insulator-metal transition in a nano-textured Mott Insulator

Laser-induced quenching of metastability at the Mott-insulator to metal transition

Magnetoresistance anomaly during the electrical triggering of a metal-insulator transition

Electric-Field-Induced Resistive Switching in a Family of Mott Insulators : towards Non-Volatile Mott-RRAM Memories

Room temperature Mott transistor based on resistive switching in disordered V2O3 films grown on Si

Spontaneous supercrystal formation during a strain-engineered metal-insulator transition

Piezo strain–controlled phase transition in single-crystalline Mott switches for threshold-manipulated leaky integrate-and-fire neurons

Thermoelectric Seebeck Effect in Oxide-Based Resistive Switching Memory.

Morphology control of volatile resistive switching in La0.67Sr0.33MnO3 thin films on LaAlO3 (001)

Room temperature Mott metal-insulator transition in V2O3 compounds induced via strain-engineering

Voltage Control of Metal-Insulator Transition and Non-Volatile Ferroelastic Switching of Resistance in VOx/PMN-PT Heterostructures.