Abstract:Resistive-switching -- the current-/voltage-induced electrical resistance change -- is at the core of memristive devices, which play an essential role in the emerging field of neuromorphic computing. This study is about resistive switching in a Mott-insulator, which undergoes a thermally driven metal-to-insulator transition. Two distinct switching mechanisms were reported for such a system: electric-field-driven resistive switching and electrothermal resistive switching. The latter results from an instability caused by Joule heating. Here, we present the visualization of the reversible resistive switching in a planar V$_2$O$_3$ thin-film device using high-resolution wide-field microscopy in combination with electric transport measurements. We investigate the interaction of the electrothermal instability with the strain-induced spontaneous phase-separation in the V$_2$O$_3$ thin film at the Mott-transition. The photomicrographs show the formation of a narrow metallic filament with a minimum width $\lesssim$ 500\,nm. Although the filament formation and the overall shape of the current-voltage characteristics (IVCs) are typical of an electrothermal breakdown, we also observe atypical effects like oblique filaments, filament splitting, and hysteretic IVCs with sawtooth-like jumps at high currents in the low-resistance regime. We were able to reproduce the experimental results in a numerical model based on a two-dimensional resistor network. This model demonstrates that resistive switching, in this case, is indeed electrothermal and that the intrinsic heterogeneity is responsible for the atypical effects. This heterogeneity is strongly influenced by strain, thereby establishing a link between switching dynamics and structural properties.

X-ray Nano-imaging of a Heterogeneous Structural Phase Transition in V2O3

Room temperature Mott metal-insulator transition in V2O3 compounds induced via strain-engineering

Suppression of Structural Phase Transition in VO 2 by Epitaxial Strain in Vicinity of Metal-insulator Transition

Optical imaging of strain-mediated phase coexistence during electrothermal switching in a Mott insulator

Competing Phases in Epitaxial Vanadium Dioxide at Nanoscale

Metal-Insulator Transition of Single-Crystal V2O3 Through Van Der Waals Interface Engineering

Nano-imaging of Strain-Tuned Stripe Textures in a Mott Crystal

Manipulating the Anisotropic Phase Separation in Strained VO2 Epitaxial Films by Nanoscale Ion-Implantation

Quantitative Functional Imaging of VO2 Metal-Insulator Transition Through Intermediate M2 Phase

In Situ Atom Scale Visualization of Domain Wall Dynamics in VO2 Insulator-Metal Phase Transition

Magnetic precursor to the structural phase transition in V$_2$O$_3$

Mott resistive switching initiated by topological defects

Manipulating the anisotropic phase separation in strained VO 2 epitaxial films by nanoscale ion-implantation

Role of Microstructures on the M1-M2 Phase Transition in Epitaxial VO2 Thin Films

Nanotextured Dynamics of a Light-Induced Phase Transition in VO 2

Nanotextured Dynamics of a Light-Induced Phase Transition in VO2.

Strain Engineering and One-Dimensional Organization of Metal–insulator Domains in Single-Crystal Vanadium Dioxide Beams

The Coupling of Local Strain and K + ‐Ion Release Induced Phase Transition Heterogeneity in Tunnel MnO 2

Enabling Magnetoelastic Coupling in Ni/VO2 Heterostructure by Structural Phase Transition

Extended Mapping and Exploration of the Vanadium Dioxide Stress-Temperature Phase Diagram.

Domain nucleation across the metal-insulator transition of self-strained V2O3 films