Suppression of Structural Phase Transition in VO 2 by Epitaxial Strain in Vicinity of Metal-insulator Transition
Mengmeng Yang,Yuanjun Yang,Bin Hong,Liangxin Wang,Kai Hu,Yongqi Dong,Han Xu,Haoliang Huang,Jiangtao Zhao,Haiping Chen,Li Song,Huanxin Ju,Junfa Zhu,Jun Bao,Xiaoguang Li,Yueliang Gu,Tieying Yang,Xingyu Gao,Zhenlin Luo,Chen Gao
DOI: https://doi.org/10.1038/srep23119
IF: 4.6
2016-01-01
Scientific Reports
Abstract:Mechanism of metal-insulator transition (MIT) in strained VO 2 thin films is very complicated and incompletely understood despite three scenarios with potential explanations including electronic correlation (Mott mechanism), structural transformation (Peierls theory) and collaborative Mott-Peierls transition. Herein, we have decoupled coactions of structural and electronic phase transitions across the MIT by implementing epitaxial strain on 13-nm-thick (001)-VO 2 films in comparison to thicker films. The structural evolution during MIT characterized by temperature-dependent synchrotron radiation high-resolution X-ray diffraction reciprocal space mapping and Raman spectroscopy suggested that the structural phase transition in the temperature range of vicinity of the MIT is suppressed by epitaxial strain. Furthermore, temperature-dependent Ultraviolet Photoelectron Spectroscopy (UPS) revealed the changes in electron occupancy near the Fermi energy E F of V 3d orbital, implying that the electronic transition triggers the MIT in the strained films. Thus the MIT in the bi-axially strained VO 2 thin films should be only driven by electronic transition without assistance of structural phase transition. Density functional theoretical calculations further confirmed that the tetragonal phase across the MIT can be both in insulating and metallic states in the strained (001)-VO 2 /TiO 2 thin films. This work offers a better understanding of the mechanism of MIT in the strained VO 2 films.