Abstract:Since Morin discovered that vanadium dioxide (VO2) undergoes a reversible and dramatic structural phase transition coupled with an abrupt metal-insulator transition, extensive attention has been paid to VO2 due to its importance in fundamental condensed state physics and its potential technological applications. Here, we observed that the precipitated phases of VO2 (insulating and metallic polymorphs) could be controlled by relaxing the dimerization of the vanadium-vanadium (V-V) atomic chain. In particular, the monoclinic metallic phase can be stabilized even at room temperature with the assistance of the angle-distortion-induced (beta = 120 degrees.) metallization through symmetry matching between the VO2 epitaxial thin films and the (0001)-oriented sapphire substrates. Concomitantly, the insulating phase (M1, beta = 122.6.) that separates from the metallic matrix may supply another driving force for stabilizing the metallic phase, as indicated by scattering-type scanning near-field optical infrared microscopy and further confirmed by synchrotron radiation high-resolution x-ray diffraction characterizations. Soft x-ray absorption spectroscopy results showed that the orbital features of the monoclinic metallic phase are analogous to those of the high-temperature metallic rutile VO2 (R) phase. First-principles calculations further demonstrate the angle-distortion-induced reduction of the V-V atomic dimerization, which enhances the electron delocalization and thus the conductivity. Therefore, the angle distortion results in the metallic monoclinic phase and stabilizes it with the assistance of the nanoscale insulating VO2 (M1) domains at room temperature. These results are of great importance for understanding the contributions of various polymorphs to the metal-insulator transition and for the design of novel artificially heterointerfacial devices based on VO2 nanoscale polymorphs.

Epitaxial Growth and Metal-Insulator Transition of Vanadium Oxide Thin Films with Controllable Phases

Thermal-stimulated Phase Transition of Vanadium Dioxide Enabling Versatile Transduction and Smart Applications

Role of Microstructures on the M1-M2 Phase Transition in Epitaxial VO2 Thin Films

For Progress in Natural Science: Materials International Investigations of Structural Phase Transformation and THz Properties Across Metal–insulator Transition in VO2/Al2O3 Epitaxial Films

Epitaxy of Monoclinic VO2 on Large-Misfit 3m Template Enabled by a Metastable Interfacial Layer

Tuning Phase Transition Kinetics Via Van Der Waals Epitaxy of Single Crystalline VO2 on Hexagonal-Bn

Polymorph Separation Induced By Angle Distortion And Electron Delocalization Effect Via Orbital Modification In Vo2 Epitaxial Thin Films

Phase management in single-crystalline vanadium dioxide beams

Enhanced Metal-Insulator Transition Performance in Scalable Vanadium Dioxide Thin Films Prepared Using a Moisture-Assisted Chemical Solution Approach

Growth and Phase Transition Characteristics of Pure M-phase VO2 Epitaxial Film Prepared by Oxide Molecular Beam Epitaxy

Metal-Insulator Transition of Single-Crystal V2O3 Through Van Der Waals Interface Engineering

Control of the Metal-Insulator Transition in VO₂ Epitaxial Film by Modifying Carrier Density.

Competing Phases in Epitaxial Vanadium Dioxide at Nanoscale

Tunable metal-insulator transition in strained thin films epitaxially grown on SiC substrates

Synthesis of Vanadium Dioxide Thin Films on Conducting Oxides and Metal–insulator Transition Characteristics

Suppression of Structural Phase Transition in VO 2 by Epitaxial Strain in Vicinity of Metal-insulator Transition

In-plane Orientation-Dependent Metal-Insulator Transition in Vanadium Dioxide Induced by Sublattice Strain Engineering

Epitaxial stabilization and phase instability of VO2 polymorphs

Strong Substrate Influence on Atomic Structure and Properties of Epitaxial VO2 Thin Films

Dynamic Modulation of Phase Transition by External Strain Engineering in Quasi‐van der Waals Epitaxial VO2 Films on Fluorophlogopite

Modulating the metal-insulator transition in VO2/Al2O3 (001) thin films by grain size and lattice strain