Abstract:The role of oxygen vacancies and interfacial strain on the metal-insulator transition (MIT) behavior of high-quality VO2 nanobeams (NBs) synthesized on SiO2/Si substrates employing V2O5 as a precursor has been investigated in this research. Selective oxygen vacancies have been generated by argon plasma irradiation. The MIT is progressively suppressed as the duration of plasma processing increases; in addition, the temperature of MIT (T-MIT) drops by up to 95 K relative to the pristine VO2 NBs. Incorporating oxygen vacancies into VO2 may increase its electron concentration, which might shift the Fermi levels upward, strengthen the electronic orbital overlap of the V-V chains, and further stabilize the metallic phase at lower temperatures, based on first-principles calculations. Furthermore, in order to evaluate the influence of substrate-induced strain in our situation, the MIT in two distinct types of VO2 NB samples is examined without metal contacts by using the distinctive light scattering characteristics of the metal (M) and insulator (I) phases (i.e., M/I domains) by optical microscopy. It is found that the domain structures in the "clamped" NBs persisted up to similar to 453 K, while the "released" NBs (transferred to a new substrate) did not exhibit any domain structures and turned into an entirely M phase with a dark contrast above similar to 348 K. When combined with first-principles calculations, the electronic orbital occupancy in the rutile phase contributes to explaining the interfacial strain-induced modulation of MIT. The current findings shed light on how interfacial strain and oxygen vacancies impact MIT behavior. It also suggests several types of control strategies for MIT in VO2 NBs, which are essential for a broader spectrum of VO2 NB applications.

Strong Substrate Influence on Atomic Structure and Properties of Epitaxial VO2 Thin Films

Strong substrate influence on atomic structure and properties of epitaxial VO2 thin films

Strain Engineering On The Metal-Insulator Transition Of Vo2/Tio2 Epitaxial Films Dependent On The Strain State Of Vanadium Dimers

Thickness-dependent Metal-to-insulator Transition in Epitaxial VO2 Films

Effects of Oxygen Vacancies and Interfacial Strain on the Metal-Insulator Transition of VO2 Nanobeams.

Growth Temperature-Dependent Metal–insulator Transition of Vanadium Dioxide Epitaxial Films on Perovskite Strontium Titanate (111) Single Crystals

Role of Microstructures on the M1-M2 Phase Transition in Epitaxial VO2 Thin Films

Thickness-modulated Metal–insulator Transition of VO2 Film Grown on Sapphire Substrate by MBE

Enhanced Metal-Insulator Transition Performance in Scalable Vanadium Dioxide Thin Films Prepared Using a Moisture-Assisted Chemical Solution Approach

Atomically resolved phase coexistence in VO2 thin films

The tetragonal-like to rutile structural phase transition in epitaxial VO2/TiO2 (001) thick films

Morphology-controlled epitaxial vanadium dioxide low-dimensional structures: the delicate effects on the phase transition behaviors.

Study of the Phase Evolution, Metal-Insulator Transition, and Optical Properties of Vanadium Oxide Thin Films

For Progress in Natural Science: Materials International Investigations of Structural Phase Transformation and THz Properties Across Metal–insulator Transition in VO2/Al2O3 Epitaxial Films

Epitaxial Growth and Metal-Insulator Transition of Vanadium Oxide Thin Films with Controllable Phases

VO$_2$ films grown on TiO$_2$ sub-layer: influence of thickness on structural, electrical and optical properties

Thickness-dependent anisotropy of metal-insulator transition in (110)-VO2/TiO2 epitaxial thin films

Analytical electron microscopy analysis of insulating and metallic phases in nanostructured vanadium dioxide

Suppression of Structural Phase Transition in VO 2 by Epitaxial Strain in Vicinity of Metal-insulator Transition

Correlation of metal-to-insulator transition and strain state of VO2 thin films on TiO2 (110) substrates