Tuning Phase Transition Kinetics Via Van Der Waals Epitaxy of Single Crystalline VO2 on Hexagonal-Bn

Saloni Pendse,Jie Jiang,Lifu Zhang,Yuwei Guo,Zhizhong Chen,Yang Hu,Zonghuan Lu,Songman Li,Jing Feng,Toh-Ming Lu,Jian Shi
DOI: https://doi.org/10.1016/j.jcrysgro.2020.125699
IF: 1.8
2020-01-01
Journal of Crystal Growth
Abstract:Vanadium dioxide (VO2) is a strongly correlated oxide widely studied for applications in electronics due to its metal-insulator transition at approximately 341 K. While thin films and nanostructures of VO2 have been grown on common rigid substrates like Al2O3, TiO2, and Si, strong chemical interaction between the substrates and VO2 can induce significant strain during the metal-insulator transition. This not only broadens the temperature range of transition but also leads to the formation of alternating insulating and metallic domains, hence complicating room temperature device applications. Here, we report growth of VO2 wires by conventional as well as van der Waals epitaxy and compare their phase transition dynamics. By revealing metal-insulator transition proceeding via a single domain within a narrow temperature range of 2 K, we present van der Waals epitaxy as an effective tool to tune phase transition kinetics in VO2 or similar systems.
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