Abstract:Mixed-dimensional van der Waals (vdW) heterostructures, integrated two-dimensional (2D) atomic crystals with three-dimensional (3D) functional materials, offer a powerful means to manipulating physical properties and generating unprecedented functionalities. Understanding interfacial couplings at those hetero (homo)-interfaces is indispensable for exploring new optical and electronic devices. Herein, we investigated dynamically phase-transition-driven strain coupling across a vdW heterointerface through integrating 2D layered 2H-MoS2 nanoflakes onto 3D phase-change VO2 epitaxial thin films. The Raman peak positions of the in-plane and out-of-plane vibration modes E2g1 and A1g from the 2H-MoS2 nanoflakes show a phonon softening and reversible hysteresis loop as a function of temperature in this mixed-dimensional vdW 2H-MoS2/(1 ̄11)-VO2/(11 ̄02)-Al2O3 heterostructure, originating from the co-action of temperature-dependent anharmonicity in 2H-MoS2 and reversible structural phase transition (SPT)-induced in-plane tensile strain from the VO2 thin film. Accordingly, the integrated Raman scattering intensity of these two feature peaks of the 2H-MoS2 nanoflakes increased (decreased) as the temperature increased (decreased), exhibiting a hysteresis loop in the SPT and metal–insulator transition region of VO2. Additionally, the peak integrated intensity enhancement ratio of the E2g1 and A1g vibration modes was approximately 2.3 and 2.8, respectively. These results indicate that the dynamically SPT-driven in-plane tensile strain from the bottom VO2 layer interfacially couples with the adjacent 2H-MoS2 nanoflakes and results in a reduction in the electronic transition energy, leading to an enhancement in the Raman scattering intensity of 2H-MoS2. Our work holds promise for dynamic strain control of lattice dynamics and electron–phonon interaction of 2D materials for functional electronic and photoelectronic devices.

Dynamic Modulation of Phase Transition by External Strain Engineering in Quasi‐van der Waals Epitaxial VO2 Films on Fluorophlogopite

Controllable Phase Transition Temperature by Regulating Interfacial Strain of Epitaxial VO2 Films

Suppression of Structural Phase Transition in VO 2 by Epitaxial Strain in Vicinity of Metal-insulator Transition

In-plane Orientation-Dependent Metal-Insulator Transition in Vanadium Dioxide Induced by Sublattice Strain Engineering

Strain Engineering On The Metal-Insulator Transition Of Vo2/Tio2 Epitaxial Films Dependent On The Strain State Of Vanadium Dimers

Impact of the uniaxial strain on terahertz modulation characteristics in flexible epitaxial VO2 film across the phase transition.

Comprehensive studies of interfacial strain and oxygen vacancy on metal-insulator transition of VO2 film.

Comprehensive studies of interfacial strain and oxygen vacancy on metal–insulator transition of VO<sub>2</sub>film

Competing Phases in Epitaxial Vanadium Dioxide at Nanoscale

Anisotropic Metal-Insulator Transition in Strained VO2(B) Single Crystal

Strain Engineering and One-Dimensional Organization of Metal–insulator Domains in Single-Crystal Vanadium Dioxide Beams

Manipulating the anisotropic phase separation in strained VO 2 epitaxial films by nanoscale ion-implantation

Correlation of metal-to-insulator transition and strain state of VO2 thin films on TiO2 (110) substrates

Anisotropic metal-insulator transition in strained VO 2 (B) single crystal

Manipulating the Anisotropic Phase Separation in Strained VO2 Epitaxial Films by Nanoscale Ion-Implantation

The tetragonal-like to rutile structural phase transition in epitaxial VO2/TiO2 (001) thick films

Tuning Phase Transition Kinetics Via Van Der Waals Epitaxy of Single Crystalline VO2 on Hexagonal-Bn

Dynamic strain coupling driven by structural phase transition in mixed-dimensional 2H-MoS2/VO2 van der Waals heterointerfaces

Wet-Etching Induced Abnormal Phase Transition in Highly Strained VO2/TiO2 (001) Epitaxial Film

Room temperature Mott metal-insulator transition in V2O3 compounds induced via strain-engineering

Thickness-dependent anisotropy of metal-insulator transition in (110)-VO2/TiO2 epitaxial thin films