Abstract:A reconfigurable optical functional system is a pioneering and comprehensive approach for portable future flexible electronics, irrespective of traditional silicon-based technology. VO 2 shows tremendous temperature-dependent structural and electrical phase transitions as a complex correlated metal oxide, presenting it as a potential candidate for bolometers, thermal camouflage, and optoelectronics applications. However, the structural stability and high transition temperature restrict room-temperature applications. The present study reports the oxygen vacancies-assisted phase transition engineering in the VO 2 /muscovite heterostructure. The ion bombardment alters the oxygen stoichiometry of VO 2 /muscovite thin film at room temperature. A significant decrease in lattice constant has been observed during the transition of the insulating M1 (monoclinic) phase into the metallic R (tetragonal) phase, which was confirmed through high-resolution XRD. The change in oxygen vacancy concentration determined using X-ray photoelectron spectroscopy (XPS) actively suppressed and stabilized the epitaxial thin film of VO 2 near room temperature. We investigated whether applying increasing power-mediated ion bombardment for a few minutes affects the oxygen vacancy formation on the VO 2 /muscovite film’s surface. Consequently, a change in KPFM and 4 orders of magnitude change in resistance of VO 2 thin film have been observed. This report reveals the fundamental understanding of controlling the MIT in epitaxial VO 2 thin film via facile and clean phase transition engineering techniques for advanced flexible electronic devices.

Phase Transition Engineering of Vanadium Dioxide Induced by Oxygen Vacancies