For Progress in Natural Science: Materials International Investigations of Structural Phase Transformation and THz Properties Across Metal–insulator Transition in VO2/Al2O3 Epitaxial Films

Mengmeng Yang,Yuanjun Yang,Liangxin Wang,Bin Hong,Haoliang Huang,Xiang Hu,Yi Zhao,Yongqi Dong,Xiaoguang Li,Yalin Lu,Jun Bao,Zhenlin Luo,Chen Gao
DOI: https://doi.org/10.1016/j.pnsc.2015.09.003
IF: 4.269
2015-01-01
Progress in Natural Science Materials International
Abstract:Vanadium dioxide (VO2) epitaxial thin films on (0001)-oriented Al2O3 substrates were prepared using radio frequency (RF) magnetron sputtering techniques. To study the metal-insulator-transition (MIT) mechanism and extend the applications of VO2 epitaxial films at terahertz (THz) band, temperature-dependent X-ray diffraction (XRD) and THz time domain spectroscopy of the VO2 epitaxial films were performed. Both the lattice constants and THz transmission exhibited a similar and sharp transition that was similar to that observed for the electrical resistance. Consequently, the MIT of the VO2/Al2O3 epitaxial films should be co-triggered by the structural phase transition and electronic transition. Moreover, the very large resistance change (on the order of ~103) and THz response (with a transmission modulation ratio of ~87%) in the VO2/Al2O3 epitaxial heterostructures are promising for electrical switch and electro-optical device applications.
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