Abstract:The Metal to Insulator Transition (MIT) in materials, particularly vanadium dioxide (VO2), has garnered significant research interest due to its potential applications in smart windows, memristors, transistors, sensors, and optical switches. The transition from an insulating, monoclinic phase to a conducting, tetragonal phase involves changes in optical and electrical properties, opening avenues in adaptive radiative coolers, optical memories, photodetectors, and optical switches. VO2 exhibits MIT close to 68 °C, thereby requiring tuneable transition temperatures (T c) in VO2 thin films for practical device applications. In this work, we explore the role of strain and defect engineering in tuning the MIT temperature in epitaxial VO2 thin films deposited on c-cut sapphire using Pulsed Laser Deposition (PLD). The study involves tuning the metal-to-insulator transition (MIT) by varying growth parameters, mainly temperature and oxygen partial pressure. Strain engineering along the b-axis helped tune the transition temperature from 65 °C to 82 °C with the out-of-plane b-strain varying from -0.71% to -0.44%. Comprehensive structural and property analyses, including X-ray diffraction (XRD), Reciprocal Space Mapping (RSM), X-ray Photoelectron Spectroscopy (XPS), Raman spectroscopy, and resistivity-temperature (R-T) measurements, were performed to correlate structural properties with T c. Additionally, density functional theory (DFT) calculations were performed using Quantum Espresso within the generalized gradient approximation of the revised Perdew-Burke-Ernzerhof (PBEsol) functional to provide theoretical validity to the experimentally obtained results. Our study provides critical insights into the interplay between strain and oxygen vacancies and their effect on the physical properties of VO2 thin films with DFT calculations supporting the experimental findings.

Comprehensive Study of the Metal-Insulator Transition in Pulsed Laser Deposited Epitaxial VO2 Thin Films

Thermal-stimulated Phase Transition of Vanadium Dioxide Enabling Versatile Transduction and Smart Applications

Revealing the high sensitivity in the metal toinsulator transition properties of the pulsed laser deposited VO2 thin films

Kinetically Decoupled Electrical and Structural Phase Transitions in VO2

Understanding the Nature of the Kinetic Process in a VO2 Metal-Insulator Transition.

Intrinsic Evolutions Of Optical Functions, Band Gap, And Higher-Energy Electronic Transitions In Vo2 Film Near The Metal-Insulator Transition Region

Nanoscale Phase Separation and Lattice Complexity in VO2: the Metal–Insulator Transition Investigated by XANES Via Auger Electron Yield at the Vanadium L23-Edge and Resonant Photoemission

Intrinsic optical properties of vanadium dioxide near the insulator-metal transition.

Metal-Insulator Transition of Single-Crystal V2O3 Through Van Der Waals Interface Engineering

Effects of Oxygen Vacancies and Interfacial Strain on the Metal-Insulator Transition of VO2 Nanobeams.

Manipulations from oxygen partial pressure on the higher energy electronic transition and dielectric function of VO2 films during a metal–insulator transition process

Control of the Metal-Insulator Transition in VO₂ Epitaxial Film by Modifying Carrier Density.

Hall Voltage Reversal and Structural Phase Transition in VO2 Thin Films

Infrared spectroscopy and nano-imaging of the insulator-to-metal transition in vanadium dioxide

Optically Monitored Electric-Field-Induced Phase Transition in Vanadium Dioxide Crystal Film

Suppression of Structural Phase Transition in VO 2 by Epitaxial Strain in Vicinity of Metal-insulator Transition

Metal–Insulator Phase Transition in Tungsten-Doped Vanadium Dioxide Thin Films

For Progress in Natural Science: Materials International Investigations of Structural Phase Transformation and THz Properties Across Metal–insulator Transition in VO2/Al2O3 Epitaxial Films

Transient dynamics of the phase transition in VO2 revealed by mega electron-volt ultrafast electron diffraction

Role of Microstructures on the M1-M2 Phase Transition in Epitaxial VO2 Thin Films

Tunable insulator-metal transition in epitaxial VO2 thin films via strain and defect engineering