Abstract:The Metal to Insulator Transition (MIT) in materials, particularly vanadium dioxide (VO2), has garnered significant research interest due to its potential applications in smart windows, memristors, transistors, sensors, and optical switches. The transition from an insulating, monoclinic phase to a conducting, tetragonal phase involves changes in optical and electrical properties, opening avenues in adaptive radiative coolers, optical memories, photodetectors, and optical switches. VO2 exhibits MIT close to 68 °C, thereby requiring tuneable transition temperatures (T c) in VO2 thin films for practical device applications. In this work, we explore the role of strain and defect engineering in tuning the MIT temperature in epitaxial VO2 thin films deposited on c-cut sapphire using Pulsed Laser Deposition (PLD). The study involves tuning the metal-to-insulator transition (MIT) by varying growth parameters, mainly temperature and oxygen partial pressure. Strain engineering along the b-axis helped tune the transition temperature from 65 °C to 82 °C with the out-of-plane b-strain varying from -0.71% to -0.44%. Comprehensive structural and property analyses, including X-ray diffraction (XRD), Reciprocal Space Mapping (RSM), X-ray Photoelectron Spectroscopy (XPS), Raman spectroscopy, and resistivity-temperature (R-T) measurements, were performed to correlate structural properties with T c. Additionally, density functional theory (DFT) calculations were performed using Quantum Espresso within the generalized gradient approximation of the revised Perdew-Burke-Ernzerhof (PBEsol) functional to provide theoretical validity to the experimentally obtained results. Our study provides critical insights into the interplay between strain and oxygen vacancies and their effect on the physical properties of VO2 thin films with DFT calculations supporting the experimental findings.

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In-plane Orientation-Dependent Metal-Insulator Transition in Vanadium Dioxide Induced by Sublattice Strain Engineering

Domain nucleation across the metal-insulator transition of self-strained V2O3 films

Suppression of Structural Phase Transition in VO 2 by Epitaxial Strain in Vicinity of Metal-insulator Transition

Controllable Phase Transition Temperature by Regulating Interfacial Strain of Epitaxial VO2 Films

Controlling Metal-Insulator Transition in (010)-Vo2/(0001)-al2o3 Epitaxial Thin Film Through Surface Morphological Engineering

Dynamic Modulation of Phase Transition by External Strain Engineering in Quasi‐van der Waals Epitaxial VO2 Films on Fluorophlogopite

Misfit Epitaxial Strain Manipulated Transport Properties in Cubic In2O3 Hetero-Epilayers

Enhanced Metal-Insulator Transition Performance in Scalable Vanadium Dioxide Thin Films Prepared Using a Moisture-Assisted Chemical Solution Approach

Thickness-dependent anisotropy of metal-insulator transition in (110)-VO2/TiO2 epitaxial thin films

Strain Engineering On The Metal-Insulator Transition Of Vo2/Tio2 Epitaxial Films Dependent On The Strain State Of Vanadium Dimers