Abstract:The Metal to Insulator Transition (MIT) in materials, particularly vanadium dioxide (VO2), has garnered significant research interest due to its potential applications in smart windows, memristors, transistors, sensors, and optical switches. The transition from an insulating, monoclinic phase to a conducting, tetragonal phase involves changes in optical and electrical properties, opening avenues in adaptive radiative coolers, optical memories, photodetectors, and optical switches. VO2 exhibits MIT close to 68 °C, thereby requiring tuneable transition temperatures (T c) in VO2 thin films for practical device applications. In this work, we explore the role of strain and defect engineering in tuning the MIT temperature in epitaxial VO2 thin films deposited on c-cut sapphire using Pulsed Laser Deposition (PLD). The study involves tuning the metal-to-insulator transition (MIT) by varying growth parameters, mainly temperature and oxygen partial pressure. Strain engineering along the b-axis helped tune the transition temperature from 65 °C to 82 °C with the out-of-plane b-strain varying from -0.71% to -0.44%. Comprehensive structural and property analyses, including X-ray diffraction (XRD), Reciprocal Space Mapping (RSM), X-ray Photoelectron Spectroscopy (XPS), Raman spectroscopy, and resistivity-temperature (R-T) measurements, were performed to correlate structural properties with T c. Additionally, density functional theory (DFT) calculations were performed using Quantum Espresso within the generalized gradient approximation of the revised Perdew-Burke-Ernzerhof (PBEsol) functional to provide theoretical validity to the experimentally obtained results. Our study provides critical insights into the interplay between strain and oxygen vacancies and their effect on the physical properties of VO2 thin films with DFT calculations supporting the experimental findings.

Tuning metal-insulator transitions in epitaxial V$_2$O$_3$ thin films

Epitaxy-Distorted Spin-Orbit Mott Insulator In Sr2iro4 Thin Films

Epitaxial Growth and Metal-Insulator Transition of Vanadium Oxide Thin Films with Controllable Phases

Tunable metal-insulator transition in strained thin films epitaxially grown on SiC substrates

Chemical, structural and electronic properties of ultrathin V2O3 films on Al2O3 substrate: Implications in Mott-like transitions

Tuning Phase Transition Kinetics Via Van Der Waals Epitaxy of Single Crystalline VO2 on Hexagonal-Bn

Tunable insulator-metal transition in epitaxial VO2 thin films via strain and defect engineering

Room temperature Mott metal-insulator transition in V2O3 compounds induced via strain-engineering

Confinement-Induced Isosymmetric Metal-Insulator Transition in Ultrathin Epitaxial V 2 O 3 Films

Fabrication of epitaxial V2O3 thin films on Al2O3 substrates via mist chemical vapor deposition

Confinement-Induced Isosymmetric Metal-Insulator Transition in Ultrathin Epitaxial V2O3 Films

Epitaxy of Monoclinic VO2 on Large-Misfit 3m Template Enabled by a Metastable Interfacial Layer

Growth of ultra thin vanadium dioxide thin films using magnetron sputtering

Modulating the Verwey Transition of Epitaxial Magnetite Thin Films by Ionic Gating

Domain nucleation across the metal-insulator transition of self-strained V2O3 films

Metal-Insulator Transition of Single-Crystal V2O3 Through Van Der Waals Interface Engineering

Tuning The Metal-Insulator Transition In Epitaxial Srvo3 Films By Uniaxial Strain

Modulating the metal-insulator transition in VO2/Al2O3 (001) thin films by grain size and lattice strain

Domain nucleation across the metal-insulator transition of self-strained films

For Progress in Natural Science: Materials International Investigations of Structural Phase Transformation and THz Properties Across Metal–insulator Transition in VO2/Al2O3 Epitaxial Films

Semiconductor-metal transition in thin VO2 films grown by ozone based atomic layer deposition