Abstract:Strongly correlated electron materials harbor interesting materials physics, such as high-Tc superconductivity, colossal magnetoresistance, and metal-insulator transition. These physical properties can be greatly influenced by the dimensionality and geometry of the hosting materials and their interaction strengths with underlying substrates. In a classic strongly correlated oxide vanadium sesquioxide (V2O3), the coexistence of a metal-insulator and paramagnetic-antiferromagnetic transitions at ∼150 K makes this material an excellent platform for exploring basic physics and developing future devices. So far, most studies have been focused on epitaxial thin films in which the strongly coupled substrate has a pronounced effect on V2O3, leading to the observations of intriguing phenomena and physics. In this work, we unveil the kinetics of a metal-insulator transition of V2O3 single-crystal sheets at nano and micro scales. We show the presence of triangle-like alternating metal/insulator phase patterns during phase transition, which is drastically different from the epitaxial film. The observation of single-stage metal-insulator transition in V2O3/graphene compared to the multistage in V2O3/SiO2 evidence the importance of sheet-substrate coupling. Harnessing the freestanding form of the V2O3 sheet, we show that the phase transition of V2O3 sheet can generate a large dynamic strain to monolayer MoS2 and tune its optical property based on the MoS2/V2O3 hybrid structure. The demonstration of the capability in tuning phase transition kinetics and phase patterns using designed hybrid structure of varied sheet-substrate coupling strengths suggests an effective knob in the design and operation of emerging Mott devices.

Confinement-Induced Isosymmetric Metal-Insulator Transition in Ultrathin Epitaxial V 2 O 3 Films

Confinement-Induced Isosymmetric Metal-Insulator Transition in Ultrathin Epitaxial V2O3 Films

Metal-Insulator Transition of Single-Crystal V2O3 Through Van Der Waals Interface Engineering

Domain nucleation across the metal-insulator transition of self-strained V2O3 films

Metal-Insulator Transition of Single-Crystal V 2 O 3 through van der Waals Interface Engineering

Room temperature Mott metal-insulator transition in V2O3 compounds induced via strain-engineering

Tuning metal-insulator transitions in epitaxial V$_2$O$_3$ thin films

Tunable metal-insulator transition in strained thin films epitaxially grown on SiC substrates

Domain nucleation across the metal-insulator transition of self-strained films

Epitaxial Growth and Metal-Insulator Transition of Vanadium Oxide Thin Films with Controllable Phases

In-plane Orientation-Dependent Metal-Insulator Transition in Vanadium Dioxide Induced by Sublattice Strain Engineering

Tuning The Metal-Insulator Transition In Epitaxial Srvo3 Films By Uniaxial Strain

Novel High-Pressure Monoclinic Metallic Phase of V2o3

Metal-insulator transition of SrVO 3 ultrathin films embedded in SrVO 3 / SrTiO 3 superlattices

Chemical, structural and electronic properties of ultrathin V2O3 films on Al2O3 substrate: Implications in Mott-like transitions

Nanoscale Phase Separation and Lattice Complexity in VO2: the Metal–Insulator Transition Investigated by XANES Via Auger Electron Yield at the Vanadium L23-Edge and Resonant Photoemission

Metal-insulator transition induced in SrTi_{1-x}V_xO_3 thin films

Dimensional-Crossover-Driven Mott Insulators in SrVO3 Ultrathin Films

Tuning Phase Transition Kinetics Via Van Der Waals Epitaxy of Single Crystalline VO2 on Hexagonal-Bn

Competing Phases in Epitaxial Vanadium Dioxide at Nanoscale

Semiconductor-metal transition in thin VO2 films grown by ozone based atomic layer deposition