Abstract:This study investigated the electronic structure of SrTi$_{1-x}$V$_x$O$_3$ (STVO) thin films, which are solid solutions of strongly correlated transparent conductive oxide (TCO) SrVO$_3$ and oxide semiconductor SrTiO$_3$, using ${in situ}$ photoemission spectroscopy. STVO is one of the most promising candidates for correlated-metal TCO because it has the capability of optimizing the performance of transparent electrodes by varying ${x}$. Systematic and significant spectral changes were found near the Fermi level (${E_{\rm F}}$) as a function of ${x}$, while the overall electronic structure of STVO is in good agreement with the prediction of band structure calculations. As ${x}$ decreases from 1.0, spectral weight transfer occurs from the coherent band near ${E_{\rm F}}$ to the incoherent states (lower Hubbard band) around 1.0-1.5 eV. Simultaneously, a pseudogap is formed at ${E_{\rm F}}$, indicating a significant reduction in quasiparticle spectral weight within close vicinity of ${E_{\rm F}}$. This pseudogap seems to evolve into an energy gap at ${x}$ = 0.4, suggesting the occurrence of a composition-driven metal-insulator transition. From angle-resolved photoemission spectroscopic results, the carrier concentration ${n}$ changes proportionally as a function of ${x}$ in the metallic range of ${x}$ = 0.6-1.0. In contrast, the mass enhancement factor, which is proportional to the effective mass (${m^*}$), does not change significantly with varying ${x}$. These results suggest that the key factor of ${n/m^*}$ in optimizing the performance of correlated-metal TCO is tuned by ${x}$, highlighting the potential of STVO to achieve the desired TCO performance in the metallic region.

Metal-insulator transition induced in SrTi_{1-x}V_xO_3 thin films

Composition-driven Mott transition within SrTi$_{\rm 1-x}$V$_{\rm x}$O$_3$

Metal-insulator transition of SrVO 3 ultrathin films embedded in SrVO 3 / SrTiO 3 superlattices

Dimensional-Crossover-Driven Mott Insulators in SrVO3 Ultrathin Films

STUDY OF THE ELECTRICAL PROPERTIES OF SOL-GEL-DERIVED TITANIUM-VANADIUM OXIDE FILMS

Tuning The Metal-Insulator Transition In Epitaxial Srvo3 Films By Uniaxial Strain

Metal-insulator transition in V 2 O 3 with intrinsic defects

Domain nucleation across the metal-insulator transition of self-strained V2O3 films

Oxygen Vacancies-Induced Metal-Insulator Transition in La2/3sr1/3vo3 Thin Films: Role of the Oxygen Substrate-To-Film Transfer

Origin Of The Metal-Insulator Transition In Ultrathin Films Of La2/3sr2/3mno3

Correlation of metal-to-insulator transition and strain state of VO2 thin films on TiO2 (110) substrates

Intrinsic Evolutions Of Optical Functions, Band Gap, And Higher-Energy Electronic Transitions In Vo2 Film Near The Metal-Insulator Transition Region

Tunable metal-insulator transition in strained thin films epitaxially grown on SiC substrates

Electronic structure of SrTi$_{1-x}$V$_x$O$_3$ films studied by ${\it in\ situ}$ photoemission spectroscopy: Screening for a transparent electrode material

Spectral Assignments in the Infrared Absorption Region and Anomalous Thermal Hysteresis in the Interband Electronic Transition of Vanadium Dioxide Films

Room temperature Mott metal-insulator transition in V2O3 compounds induced via strain-engineering

Synthesis of Vanadium Dioxide Thin Films on Conducting Oxides and Metal–insulator Transition Characteristics

Domain nucleation across the metal-insulator transition of self-strained films

Metal–Insulator Phase Transition in Tungsten-Doped Vanadium Dioxide Thin Films

Modulating the metal-insulator transition in VO2/Al2O3 (001) thin films by grain size and lattice strain

Thickness-Dependent Metal-Insulator Transition In Epitaxial Srruo3 Ultrathin Films