Thickness-Dependent Metal-Insulator Transition In Epitaxial Srruo3 Ultrathin Films

xuan shen,xiangbiao qiu,dong su,shengqiang zhou,aidong li,di wu
DOI: https://doi.org/10.1063/1.4905485
IF: 2.877
2015-01-01
Journal of Applied Physics
Abstract:Transport characteristics of ultrathin SrRuO3 films, deposited epitaxially on TiO2-terminated SrTiO3 (001) single-crystal substrates, were studied as a function of film thickness. Evolution from a metallic to an insulating behavior is observed as the film thickness decreases from 20 to 4 unit cells. In films thicker than 4 unit cells, the transport behavior obeys the Drude low temperature conductivity with quantum corrections, which can be attributed to weak localization. Fitting the data with 2-dimensional localization model indicates that electron-phonon collisions are the main inelastic relaxation mechanism. In the film of 4 unit cells in thickness, the transport behavior follows variable range hopping model, indicating a strongly localized state. Magnetoresistance measurements reveal a likely magnetic anisotropy with the magnetic easy axis along the out-of-plane direction. (C) 2015 AIP Publishing LLC.
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