Thickness-dependent insulator-to-metal transition in epitaxial films

Anil Kumar Rajapitamahuni,Sreejith Nair,Zhifei Yang,Anusha Kamath Manjeshwar,Seung Gyo Jeong,William Nunn,Bharat Jalan
DOI: https://doi.org/10.1103/physrevmaterials.8.075002
IF: 3.98
2024-07-19
Physical Review Materials
Abstract:Epitaxially grown RuO2 films on TiO2 (110) exhibit significant in-plane strain anisotropy, with a compressive strain of −4.7% along the [001] crystalline direction and a tensile strain of +2.3% along [11 ̄0] . As the film thickness increases, anisotropic strain relaxation is expected. By fabricating Hall bar devices with current channels along two in-plane directions, 〈001〉 and 〈11 ̄0〉 , we reveal anisotropic in-plane transport in RuO2/TiO2 (110) films grown via the solid-source metal-organic molecular beam epitaxy approach. For film thicknesses (tfilm)≤3.6 nm, the resistivity along 〈001〉 exceeds that along the 〈11 ̄0〉 direction at all temperatures. With further decrease in film thickness, we uncover a transition from metallic to insulating behavior at tfilm≤2.1 nm. Our combined temperature- and magnetic field-dependent electrical transport measurements reveal that this transition from metallic to insulating behavior is driven by electron-electron interactions. https://doi.org/10.1103/PhysRevMaterials.8.075002 ©2024 American Physical Society
materials science, multidisciplinary
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