Origin of the Metal-Insulator Transition in Ultrathin Films Ofla2/3sr2/3mn<…

Zhaoliang Liao,Fengmiao Li,Peng Gao,Li Lin,Jiandong Guo,Xiaoqing Pan,Rongying Jin,E. W. Plummer,Jiandi Zhang

DOI: https://doi.org/10.1103/physrevb.92.125123

IF: 3.7

2015-01-01

Physical Review B

Abstract:Many ultrathin films of transition metal oxides exhibit nonmetallic behavior, in contrast to their metallic bulk counterpart, thus displaying a metal-insulator transition (MIT) as the film thickness is reduced. The nature of this MIT has been a long-standing issue in the epitaxial oxide research community. Here, we report the processing dependence of the critical thickness (${t}_{\mathrm{c}}$) of MIT and the origin of the insulating phase in $\mathrm{L}{\mathrm{a}}_{2/3}\mathrm{S}{\mathrm{r}}_{1/3}\mathrm{Mn}{\mathrm{O}}_{3}$ (LSMO) films. A ${t}_{\mathrm{c}}$ of 3 unit cells (u.c.) is achieved by minimizing oxygen vacancies under optimal growth conditions, diminishing the epitaxial strain with a tunable buffer layer and suppressing surface strain by film capping. The electrical transport measurements demonstrate that the nonmetallic behavior in LSMO thin films is an unavoidable result of localization initiated by inherent disorder but amplified by the reduction in dimensionality.