Publisher's Note: Origin of the Metal-Insulator Transition in Ultrathin Films Ofla2/3sr1/3mno3[phys. Rev. B92, 125123 (2015)]

Zhaoliang Liao,Fengmiao Li,Peng Gao,Lin Li,Jiandong Guo,Xiaoqing Pan,R. Jin,E. W. Plummer,Jiandi Zhang

DOI: https://doi.org/10.1103/physrevb.92.119906

IF: 3.7

2015-01-01

Physical Review B

What problem does this paper attempt to address?

Origin Of The Metal-Insulator Transition In Ultrathin Films Of La2/3sr2/3mno3

Zhaoliang Liao,Fengmiao Li,Peng Gao,Lin Li,Jiandong Guo,Xiaoqing Pan,Rongying Jin,E. W. Plummer,Jiandi Zhang

DOI: https://doi.org/10.1103/PhysRevB.92.125123

IF: 3.7

2015-01-01

Physical Review B

Abstract:Many ultrathin films of transition metal oxides exhibit nonmetallic behavior, in contrast to their metallic bulk counterpart, thus displaying a metal-insulator transition (MIT) as the film thickness is reduced. The nature of this MIT has been a long-standing issue in the epitaxial oxide research community. Here, we report the processing dependence of the critical thickness (t(c)) of MIT and the origin of the insulating phase in La2/3Sr1/3MnO3 (LSMO) films. A t(c) of 3 unit cells (u.c.) is achieved by minimizing oxygen vacancies under optimal growth conditions, diminishing the epitaxial strain with a tunable buffer layer and suppressing surface strain by film capping. The electrical transport measurements demonstrate that the nonmetallic behavior in LSMO thin films is an unavoidable result of localization initiated by inherent disorder but amplified by the reduction in dimensionality.
Pure Electronic Metal-Insulator Transition at the Interface of Complex Oxides

D. Meyers,Jian Liu,J. W. Freeland,S. Middey,M. Kareev,Jin‐Won Kwon,Jian‐Min Zuo,Yi‐De Chuang,Jong Woo Kim,Philip J. Ryan,J. Chakhalian

DOI: https://doi.org/10.1038/srep27934

IF: 4.6

2016-01-01

Scientific Reports

Abstract:In complex materials observed electronic phases and transitions between them often involve coupling between many degrees of freedom whose entanglement convolutes understanding of the instigating mechanism. Metal-insulator transitions are one such problem where coupling to the structural, orbital, charge and magnetic order parameters frequently obscures the underlying physics. Here, we demonstrate a way to unravel this conundrum by heterostructuring a prototypical multi-ordered complex oxide NdNiO 3 in ultra thin geometry, which preserves the metal-to-insulator transition and bulk-like magnetic order parameter, but entirely suppresses the symmetry lowering and long-range charge order parameter. These findings illustrate the utility of heterointerfaces as a powerful method for removing competing order parameters to gain greater insight into the nature of the transition, here revealing that the magnetic order generates the transition independently, leading to an exceptionally rare purely electronic metal-insulator transition with no symmetry change.
Origin of the Metal-Insulator Transition in Ultrathin Films Ofla2/3sr2/3mn<…

Zhaoliang Liao,Fengmiao Li,Peng Gao,Li Lin,Jiandong Guo,Xiaoqing Pan,Rongying Jin,E. W. Plummer,Jiandi Zhang

DOI: https://doi.org/10.1103/physrevb.92.125123

IF: 3.7

2015-01-01

Physical Review B

Abstract:Many ultrathin films of transition metal oxides exhibit nonmetallic behavior, in contrast to their metallic bulk counterpart, thus displaying a metal-insulator transition (MIT) as the film thickness is reduced. The nature of this MIT has been a long-standing issue in the epitaxial oxide research community. Here, we report the processing dependence of the critical thickness (${t}_{\mathrm{c}}$) of MIT and the origin of the insulating phase in $\mathrm{L}{\mathrm{a}}_{2/3}\mathrm{S}{\mathrm{r}}_{1/3}\mathrm{Mn}{\mathrm{O}}_{3}$ (LSMO) films. A ${t}_{\mathrm{c}}$ of 3 unit cells (u.c.) is achieved by minimizing oxygen vacancies under optimal growth conditions, diminishing the epitaxial strain with a tunable buffer layer and suppressing surface strain by film capping. The electrical transport measurements demonstrate that the nonmetallic behavior in LSMO thin films is an unavoidable result of localization initiated by inherent disorder but amplified by the reduction in dimensionality.
Heterointerface Engineered Electronic and Magnetic Phases of NdNiO 3 Thin Films

Alejandro Cruz

DOI: https://doi.org/10.1038/ncomms3714

IF: 16.6

2013-01-01

Nature Communications

Abstract:Mott physics is characterized by an interaction-driven metal-to-insulator transition in a partially filled band. In the resulting insulating state, antiferromagnetic orders of the local moments typically develop, but in rare situations no long-range magnetic order appears, even at zero temperature, rendering the system a quantum spin liquid. A fundamental and technologically critical question is whether one can tune the underlying energetic landscape to control both metal-to-insulator and Néel transitions, and even stabilize latent metastable phases, ideally on a platform suitable for applications. Here we demonstrate how to achieve this in ultrathin films of NdNiO3 with various degrees of lattice mismatch, and report on the quantum critical behaviours not reported in the bulk by transport measurements and resonant X-ray spectroscopy/scattering. In particular, on the decay of the antiferromagnetic Mott insulating state into a non-Fermi liquid, we find evidence of a quantum metal-to-insulator transition that spans a non-magnetic insulating phase.
Magnetic, Electrical Transport, and Thermoelectric Properties of Sr4ru3o10: Evidence for A Field-Induced Electronic Phase Transition at Low Temperatures

Zhuan Xu,Xiangfan Xu,Rafael S. Freitas,Zhenyi Long,Meng Zhou,David Fobes,Minghu Fang,Peter Schiffer,Zhiqiang Mao,Ying Liu

DOI: https://doi.org/10.1103/physrevb.76.094405

IF: 3.7

2007-01-01

Physical Review B

Abstract:We report measurements on resistivity, thermopower, and magnetization as a function of temperature and magnetic field on single crystalline ${\mathrm{Sr}}_{4}{\mathrm{Ru}}_{3}{\mathrm{O}}_{10}$ grown by the floating-zone method. The in-plane and $c$-axis resistivities, magnetization, and the thermopower were found to exhibit a step feature at low temperatures (below roughly $30\phantom{\rule{0.3em}{0ex}}\mathrm{K}$), accompanied by hysteresis behavior when the in-plane field was swept up and down from below $10\phantom{\rule{0.3em}{0ex}}\mathrm{kOe}$ to above $20\phantom{\rule{0.3em}{0ex}}\mathrm{kOe}$. In particular, the sharp increase in the thermopower with increasing in-plane magnetic field at low temperatures has not been observed previously in layered transition metal oxides. We propose that these observations can be explained by the existence of a transition between two electronic states in ${\mathrm{Sr}}_{4}{\mathrm{Ru}}_{3}{\mathrm{O}}_{10}$ in low and high in-plane magnetic fields, respectively, and the alignment of domains is responsible for the emergence of a different electronic state as the in-plane field is ramped up.
Insulating Phase at Low Temperature in Ultrathin La0.8Sr0.2MnO3 Films

Feng, Yaqing,Jin, Kui-juan,Gu, Lin,He, Xu,Ge, Chen,Zhang, Qing-hua,He, Min,Guo, Qin-lin,Wan, Qian,He, Meng,Lu, Hui-bin,Yang, Guozhen

DOI: https://doi.org/10.1038/srep22382

IF: 4.6

2016-01-01

Scientific Reports

Abstract:Metal-insulator transition is observed in the La0.8Sr0.2MnO3 thin films with thickness larger than 5 unit cells. Insulating phase at lower temperature appeared in the ultrathin films with thickness ranging from 6 unit cells to 10 unit cells and it is found that the Mott variable range hopping conduction dominates in this insulating phase at low temperature with a decrease of localization length in thinner films. A deficiency of oxygen content and a resulting decrease of the Mn valence have been observed in the ultrathin films with thickness smaller than or equal to 10 unit cells by studying the aberration-corrected scanning transmission electron microscopy and electron energy loss spectroscopy of the films. These results suggest that the existence of the oxygen vacancies in thinner films suppresses the double-exchange mechanism and contributes to the enhancement of disorder, leading to a decrease of the Curie temperature and the low temperature insulating phase in the ultrathin films. In addition, the suppression of the magnetic properties in thinner films indicates stronger disorder of magnetic moments, which is considered to be the reason for this decrease of the localization length.
Unveiling a Novel Insulator-to-metal Transition in La2NiO4+δ: Challenging Hightemperature Superconductivity Claims in Single-Layer Lanthanum Nickelates

Yunqi Ji,Xiaohan Wang,Xiaohe Li,Wenting Tang,Xinyang Li,Xin Wang,Fangfei Li,Liang Li,Qing Zhou

DOI: https://doi.org/10.1088/0256-307x/41/9/097402

2024-01-01

Chinese Physics Letters

Abstract:La2NiO4 has a similar structure to La2CuO4 and was proposed as a high-temperature superconductor based on magnetic-moment measurements decades ago. Nevertheless, with the exception for electrical resistance drop behavior of about 4 orders of magnitude that is claimed to originate from the superconductivity ever observed in Sr-doped La2NiO4, most electrical data reported to date in La2NiO4 system exhibit a trivial insulating ground state. Here, we definitively identify the similar electrical resistance drop behavior of more than 3 orders of magnitude in La2NiO4+delta. However, our extensive investigations reveal that this phenomenon is a novel insulator-to-metal transition, distinct from superconductivity. Intriguingly, compared to the weak magnetic-field effects, pressure can significantly suppress the transition and transform from the metallic to an insulating ground state, accompanied by an isostructural phase transition. Our work not only elucidates the fundamental properties of the metallic conducting ground state in La2NiO4+delta, but also critically challenges the notion of superconductivity in single-layer lanthanum nickelates.
Atomic-Scale Metal-Insulator Transition in SrRuO3 Ultrathin Films Triggered by Surface Termination Conversion

Han Gyeol Lee,Lingfei Wang,Liang Si,Xiaoyue He,Daniel G Porter,Jeong Rae Kim,Eun Kyo Ko,Jinkwon Kim,Sung Min Park,Bongju Kim,Andrew Thye Shen Wee,Alessandro Bombardi,Zhicheng Zhong,Tae Won Noh

DOI: https://doi.org/10.1002/adma.201905815

Abstract:The metal-insulator transition (MIT) in transition-metal-oxide is fertile ground for exploring intriguing physics and potential device applications. Here, an atomic-scale MIT triggered by surface termination conversion in SrRuO3 ultrathin films is reported. Uniform and effective termination engineering at the SrRuO3 (001) surface can be realized via a self-limiting water-leaching process. As the surface termination converts from SrO to RuO2 , a highly insulating and nonferromagnetic phase emerges within the topmost SrRuO3 monolayer. Such a spatially confined MIT is corroborated by systematic characterizations on electrical transport, magnetism, and scanning tunneling spectroscopy. Density functional theory calculations and X-ray linear dichroism further suggest that the surface termination conversion breaks the local octahedral symmetry of the crystal field. The resultant modulation in 4d orbital occupancy stabilizes a nonferromagnetic insulating surface state. This work introduces a new paradigm to stimulate and tune exotic functionalities of oxide heterostructures with atomic precision.
Metal insulator transitions in perovskite SrIrO3 thin films

Abhijit Biswas,Ki-Seok Kim,Yoon Hee Jeong

DOI: https://doi.org/10.1063/1.4903314

2014-12-04

Abstract:Understanding of metal insulator transitions in a strongly correlated system, driven by Anderson localization (disorder) and/or Mott localization (correlation), is a long standing problem in condensed matter physics. The prevailing fundamental question would be how these two mechanisms contrive to accomplish emergent anomalous behaviors. Here, we have grown high quality perovskite SrIrO3 thin films, containing a strong spin orbit coupled 5d element Ir, on various substrates such as GdScO3 (110), DyScO3 (110), SrTiO3 (001), and NdGaO3 (110) with increasing lattice mismatch, in order to carry out a systematic study on the transport properties. We found that metal insulator transitions can be induced in this system; by either reducing thickness (on best lattice matched substrate) or changing degree of lattice strain (by lattice mismatch between film and substrates) of films. Surprisingly these two pathways seek two distinct types of metal insulator transitions; the former falls into disorder driven Anderson type whereas the latter turns out to be of unconventional Mott-Anderson type with the interplay of disorder and correlation. More interestingly, in the metallic phases of SrIrO3, unusual non-Fermi liquid characteristics emerge in resistivity as the resistivity exponent evolves from from 4/5 to 1 to 3/2 with increasing lattice strain. We discuss theoretical implications of these phenomena to shed light on the metal insulator transitions.

Strongly Correlated Electrons
An atomically controlled insulator-to-metal transition in iridate/manganite heterostructures

Enyang Men,Deyang Li,Haiyang Zhang,Jingxin Chen,Zhihan Qiao,Long Wei,Zhaosheng Wang,Chuanying Xi,Dongsheng Song,Yuhan Li,Hyoungjeen Jeen,Kai Chen,Hong Zhu,Lin Hao

DOI: https://doi.org/10.1038/s41467-024-52616-8

IF: 16.6

2024-09-29

Nature Communications

Abstract:All-insulator heterostructures with an emerging metallicity are at the forefront of material science, which typically contain at least one band insulator while it is not necessary to be. Here we show emergent phenomena in a series of all-correlated-insulator heterostructures that composed of insulating CaIrO 3 and insulating La 0.67 Sr 0.33 MnO 3 . We observed an intriguing insulator-to-metal transition, that depends delicately on the thickness of the iridate component. The simultaneous enhancements of magnetization, electric conductivity, and magnetoresistance effect indicate a percolation-type nature of the insulator-to-metal transition, with the percolation threshold can be reached at an exceptionally low volume fraction of the iridate. Such a drastic transition is induced by an interfacial charge transfer, which interestingly alters the electronic and crystalline structures of the bulk region rather than the limited ultrathin interface. We further showcased the central role of effective correlation in modulating the insulator-to-metal transition, by demonstrating that the critical thickness of iridate for triggering the metallic state can be systematically reduced down to a single unit-cell layer.

multidisciplinary sciences
Isostructural metal-insulator transition driven by dimensional-crossover in heterostructures

Shuai Kong,Lei Li,Zengxing Lu,Jiatai Feng,Xuan Zheng,Pengbo Song,You-guo Shi,Yumei Wang,Binghui Ge,Katharina Rolfs,Ekaterina Pomjakushina,Thorsten Schmitt,Nicholas C. Plumb,Ming Shi,Zhicheng Zhong,Milan Radovic,Zhiming Wang,Run-Wei Li

DOI: https://doi.org/10.1103/physrevmaterials.6.034404

IF: 3.98

2022-03-22

Physical Review Materials

Abstract:Dimensionality reduction induced metal-insulator transitions in oxide heterostructures are usually coupled with structural and magnetic phase transitions, which complicate the interpretation of the underlying physics. Therefore, achieving isostructural MIT is of great importance for fundamental physics and even more for applications. Here, we report an isostructural metal-insulator transition driven by dimensional-crossover in spin-orbital coupled SrIrO3 films. By using in situ pulsed laser deposition and angle-resolved photoemission spectroscopy, we synthesized and investigated the electronic structure of SrIrO3 ultrathin films with atomic-layer precision. Through inserting orthorhombic CaTiO3 buffer layers, combined low-energy electron diffraction measurements and first-principles density functional theory calculations show that the crystal structure of SrIrO3 films remains bulklike with similar oxygen octahedra rotation and tilting when approaching the ultrathin limit. We observe that a dimensional-crossover metal-insulator transition occurs in isostructural SrIrO3 films. Intriguingly, we find the bandwidth of Jeff=3/2 states reduces with lowering the dimensionality and drives the metal-insulator transition. Our results establish a bandwidth controlled metal-insulator transition in the isostructural SrIrO3 thin films. https://doi.org/10.1103/PhysRevMaterials.6.034404 ©2022 American Physical Society

materials science, multidisciplinary
Tuning The Metal-Insulator Transition In Epitaxial Srvo3 Films By Uniaxial Strain

Changan Wang,Hongbin Zhang,Kumar Deepak,Chao Chen,Arnaud Fouchet,Juanmei Duan,Donovan Hilliard,Ulrich Kentsch,Deyang Chen,Min Zeng,Xingsen Gao,Yu-Jia Zeng,Manfred Helm,Wilfrid Prellier,Shengqiang Zhou

DOI: https://doi.org/10.1103/PhysRevMaterials.3.115001

IF: 3.98

2019-01-01

Physical Review Materials

Abstract:Understanding of the metal-insulator transition (MIT) in correlated transition-metal oxides is a fascinating topic in condensed matter physics and a precise control of such transitions plays a key role in developing novel electronic devices. Here we report an effective tuning of the MIT in epitaxial SrVO3 (SVO) films by expanding the out-of-plane lattice constant without changing in-plane lattice parameters, through helium ion irradiation. Upon increase of the ion fluence, we observe a MIT with a crossover from metallic to insulating state in SVO films. A combination of transport and magnetoresistance measurements in SVO at low temperatures reveals that the observed MIT is mainly ascribed to electron-electron interactions rather than disorder-induced localization. Moreover, these results are well supported by the combination of density functional theory and dynamical mean-field theory calculations, further confirming the decrease of the bandwidth and the enhanced electron-electron interactions resulting from the expansion of the out-of-plane lattice constant. These findings provide insights into the understanding of MIT in correlated oxides and perspectives for the design of unexpected functional devices based on strongly correlated electrons.
Atomic-Scale Observation of Structure Transition from Brownmillerite to Infinite Layer in SrFeO 2.5 Thin Films

Liang Zhu,Lei Gao,Lifen Wang,Zhi Xu,Jianlin Wang,Xiaomin Li,Lei Liao,Tongtong Huang,Hailing Huang,Ailing Ji,Nianpeng Lu,Zexian Cao,Qian Li,Ji-Rong Sun,Pu Yu,Xuedong Bai

DOI: https://doi.org/10.1021/acs.chemmater.0c04683

IF: 10.508

2021-04-26

Chemistry of Materials

Abstract:Stoichiometry modulation in transition-metal perovskite oxides is a pivotal process that can give rise to unprecedented structures and new functionalities. Despite intensive study, the atomic mechanism of the structural transitions occurring in these versatile solid-state ceramics is far from well understood. Here, utilizing in situ electrical biasing (scanning) transmission electron microscopy, we show that the transformation from brownmillerite SrFeO2.5 to infinite-layer SrFeO2 can be directly visualized with atomic resolution. Our observations unveil that the transition process occurring in the cross section thinned film contains two steps. At the initial stage, the tilting of FeO6 octahedra and rotation of the FeO4 tetrahedra due to possible ferroelectricity result in conversion from the mixed structural domains (a|| and b||) to a homogeneous domain (a||) in SrFeO2.5; next, the electric reduced infinite-layer SrFeO2 gradually begins to nucleate at the film/substrate end showing a sharp interface and finally spreads across the entire film. The microscopic kinetics is dominated by the rearrangement of the Fe–O bonding geometry, which occurs through a two-step phase-transition mechanism involving oxygen polyhedral rearrangement, oxygen diffusion, and planar phase formation along the c-axis. This work clarifies the microscopic atomic processes of the oxygen polyhedral rearrangement, oxide ion migration, and the final phase transition from brownmillerite to infinite-layer structure, and offers a new pathway to obtain designed structural materials with specific functionality.The Supporting Information is available free of charge at <a class="ext-link" href="/doi/10.1021/acs.chemmater.0c04683?goto=supporting-info">https://pubs.acs.org/doi/10.1021/acs.chemmater.0c04683</a>.EELS analysis; structure characterization of SrFeO2.5; electrically driven reversible phase transition; phase transition during electron beam irradiation; the process of oxide ion migration in the horizontal and vertical SrFeO2.5; and simulation of electric field distribution (<a class="ext-link" href="/doi/suppl/10.1021/acs.chemmater.0c04683/suppl_file/cm0c04683_si_001.pdf">PDF</a>)First-step phase transition (<a class="ext-link" href="/doi/suppl/10.1021/acs.chemmater.0c04683/suppl_file/cm0c04683_si_002.avi">AVI</a>)Second-step phase transition (<a class="ext-link" href="/doi/suppl/10.1021/acs.chemmater.0c04683/suppl_file/cm0c04683_si_003.avi">AVI</a>)This article has not yet been cited by other publications.

materials science, multidisciplinary,chemistry, physical
Unexpected Intermediate State Photoinduced in the Metal-Insulator Transition of Submicrometer Phase-Separated Manganites.

Hanxuan Lin,Hao Liu,Lingfang Lin,Shuai Dong,Hongyan Chen,Yu Bai,Tian Miao,Yang Yu,Weichao Yu,Jing Tang,Yinyan Zhu,Yunfang Kou,Jiebin Niu,Zhaohua Cheng,Jiang Xiao,Wenbin Wang,Elbio Dagotto,Lifeng Yin,Jian Shen

DOI: https://doi.org/10.1103/PhysRevLett.120.267202

IF: 8.6

2018-01-01

Physical Review Letters

Abstract:At ultrafast timescales, the initial and final states of a first-order metal-insulator transition often coexist forming clusters of the two phases. Here, we report an unexpected third long-lived intermediate state emerging at the photoinduced first-order metal-insulator transition of La-0.325 Pr-0.3 Ca-0.375 MnO3, known to display submicrometer length-scale phase separation. Using magnetic force microscopy and time-dependent magneto-optical Kerr effect, we determined that the third state is a nanoscale mixture of the competing ferromagnetic metallic and charge-ordered insulating phases, with its own physical properties. This discovery bridges the two different families of colossal magnetoresistant manganites known experimentally and shows for the first time that the associated states predicted by theory can coexist in a single sample.
Magnetoelectric Transport and Quantum Interference Effect in Ultrathin Manganite Films

Cong Wang,Kui-juan Jin,Lin Gu,Hui-bin Lu,Shan-ming Li,Wen-jia Zhou,Rui-qiang Zhao,Hai-zhong Guo,Meng He,Guo-zhen Yang

DOI: https://doi.org/10.1063/1.4873337

IF: 4

2014-01-01

Applied Physics Letters

Abstract:The magnetoelectric transport behavior with respect to the thicknesses of ultrathin La0.9Sr0.1MnO3 films is investigated in detail. The metal-insulator phase transition, which has never been observed in bulk La0.9Sr0.1MnO3, is found in ultrathin films with thicknesses larger than 6 unit cells. Low-temperature resistivity minima appeared in films with thicknesses less than 10 unit cells. This is attributed to the presence of quantum interference effects. These data suggest that the influence of the weak localization becomes much pronounced as the film thickness decreases from 16 to 8 unit cells.
Electric and Magnetic Properties of La0.67sr0.33mno3 Thin Films with A Metal-Insulator Crossover Behavior

Y. H. Sun,Y. G. Zhao,M. H. Zhu,B. T. Xie,W. B. Wu

DOI: https://doi.org/10.1063/1.4737783

IF: 2.877

2012-01-01

Journal of Applied Physics

Abstract:The electric and magnetic properties of 10 nm thick La0.67Sr0.33MnO3 films grown on LaAlO3 substrates have been investigated. Structural analysis shows the high quality of the films. With decreasing temperature, the resistivity of the samples increases and shows a peak at about 90 K, followed by a resistivity minimum at about 30 K, manifesting a metal-insulator crossover behavior, which is quite different from the transport behaviors of thicker or thinner films. Both electric current and magnetic field can distinctly reduce the resistivity. Remarkable electroresistance under very low currents, strong resistive hysteresis, and exchange bias effect are observed at low temperatures. The results are discussed in terms of phase separation induced by compressive strain in the films.
Reentrance of Low-Temperature Nonmetallic Phase of L a 2 / 3 S R 1 / 3 Mn O 3 (110) Thin Films

Lin Li,Zhaoliang Liao,Zhenyu Diao,Rongying Jin,E. W. Plummer,Jiandong Guo,Jiandi Zhang

DOI: https://doi.org/10.1103/physrevmaterials.1.034405

IF: 3.98

2017-01-01

Physical Review Materials

Abstract:We have studied $\mathrm{L}{\mathrm{a}}_{2/3}\mathrm{S}{\mathrm{r}}_{1/3}\mathrm{Mn}{\mathrm{O}}_{3}$ thin films grown on (3\ifmmode\times\else\texttimes\fi{}1)-reconstructed $\mathrm{SrTi}{\mathrm{O}}_{3}$ (110) substrates. Films with thicknesses less than the critical thickness of ${\ensuremath{\theta}}_{\mathrm{c}}\ensuremath{\cong}8$ unit cells are insulating in the measured temperature ($T$) range (2--400 K). However, films with thicknesses slightly over ${\ensuremath{\theta}}_{\mathrm{c}}$ exhibit reentrant nonmetallic behavior at low temperatures in addition to the normally observed metal-insulator transition at higher temperatures. In contrast, the magnetization does not show signs of low-$T$ transitions. Such reentrance of a low-$T$ nonmetallic phase is affected by the film thickness as well as the density of oxygen vacancies. The electrical resistivity analysis reveals that localization effects are responsible for the reentrant nonmetallic behavior, which is enhanced with reduced film thickness.
Light‐Induced Mott‐Insulator‐to‐Metal Phase Transition in Ultrathin Intermediate‐Spin Ferromagnetic Perovskite Ruthenates (Adv. Mater. 12/2023)

Ruxin Liu,Liang Si,Wei Niu,Xu Zhang,Zhongqiang Chen,Changzheng Zhu,Wenzhuo Zhuang,Yongda Chen,Liqi Zhou,Chunchen Zhang,Peng Wang,Fengqi Song,Lin Tang,Yongbing Xu,Zhicheng Zhong,Rong Zhang,Xuefeng Wang

DOI: https://doi.org/10.1002/adma.202370087

IF: 29.4

2023-03-25

Advanced Materials

Abstract:Insulator–Metal Transition In article number 2211612, Zhicheng Zhong, Xuefeng Wang, and co‐workers report that UV‐light irradiation on perovskite‐based heterostructures can drive the photocharge transfer from SrTiO3 substrates to intermediate‐spin ferromagnetic SrRuO3 ultrathin films containing oxygen vacancies. As a consequence, a reversible Mott‐insulator‐to‐metal phase transition occurs in the SrRuO3 layer, as revealed by systematic light‐irradiation transport experiments and dynamical mean‐field theory calculations.

materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter,nanoscience & nanotechnology
Thickness-driven First-Order Phase Transitions in Manganite Ultrathin Films

Hongyan Chen,Yang Yu,Zhe Wang,Yu Bai,Hanxuan Lin,Xiaolong Li,Hao Liu,Tian Miao,Yunfang Kou,Yongsheng Zhang,Yan Li,Jin Tang,Zechao Wang,Peng Cai,Yinyan Zhu,Zhaohua Cheng,Xiaoyan Zhong,Wenbin Wang,Xingyu Gao,Lifeng Yin,Ruqian Wu,Jian Shen

DOI: https://doi.org/10.1103/physrevb.99.214419

2019-01-01

Abstract:We report thickness dependent inhomogeneous antiferromagnetic (AFM) to ferromagnetic (FM) phase transitions in ultrathin $\mathrm{L}{\mathrm{a}}_{0.7}\mathrm{S}{\mathrm{r}}_{0.3}\mathrm{Mn}{\mathrm{O}}_{3}$ (LSMO) films grown on the $\mathrm{SrTi}{\mathrm{O}}_{3}$ substrate. When the films are 4--7 unit cells (UCs) thick, FM domains appear as isolated nanodisks in the AFM matrix that together floats on top of the three AFM base UCs, leading a superparamagnetic blocking behavior. Our first principles calculations unravel the rather counterintuitive physical origin of this mixed phase state; the formation of FM/AFM domain boundaries is energetically favorable. At 8 UCs, an abrupt shear strain relief occurs in the LSMO thin film and twinning patterns with two unit cell periodicity form along the [010] and [100] directions. Our studies reveal the complexity of the magnetic phase transition at the nanometer scale and open a door for the development of quantum devices and statistical theories.
Metal insulator transition and magnetotransport anomalies in perovskite SrIr0.5Ru0.5O3 thin films

Abhijit Biswas,Yong Woo Lee,Sang Woo Kim,Yoon Hee Jeong

DOI: https://doi.org/10.1063/1.4915943

2015-09-10

Abstract:We investigated the nature of transport and magnetic properties in SrIr0.5Ru0.5O3, (SIRO) which has characteristics intermediate between a correlated non-Fermi liquid state and an itinerant Fermi liquid state, by growing perovskite thin films on various substrates (SrTiO3 (001), (LaAlO3)0.3(Sr2TaAlO6)0.7 (001) and LaAlO3 (001)). We observed systematic variation of underlying substrate dependent metal-to-insulator transition temperatures at 80 K on SrTiO3, 90 K on (LaAlO3)0.3(Sr2TaAlO6)0.7 and 100 K on LaAlO3) in resistivity. Resistivity in the metallic region follows a T3/2 power law; whereas insulating nature at low T is due to the localization effect. Magnetoresistance (MR) measurement of SIRO on SrTiO3 (001) shows negative MR upto 25 K and positive MR above 25 K, with negative MR proportional to B1/2 and positive MR proportional to B2; consistent with the localized-to-normal transport crossover dynamics. Furthermore, observed spin glass like behavior of SIRO on SrTiO3 (001) in the localized regime, validates the hypothesis that (Anderson) localization favors glassy ordering. These remarkable features provide a promising approach for future applications and of fundamental interest in oxide thin films.

Strongly Correlated Electrons

Publisher's Note: Origin of the Metal-Insulator Transition in Ultrathin Films Ofla2/3sr1/3mno3[phys. Rev. B92, 125123 (2015)]

Origin Of The Metal-Insulator Transition In Ultrathin Films Of La2/3sr2/3mno3

Pure Electronic Metal-Insulator Transition at the Interface of Complex Oxides

Origin of the Metal-Insulator Transition in Ultrathin Films Ofla2/3sr2/3mn<…

Heterointerface Engineered Electronic and Magnetic Phases of NdNiO 3 Thin Films

Magnetic, Electrical Transport, and Thermoelectric Properties of Sr4ru3o10: Evidence for A Field-Induced Electronic Phase Transition at Low Temperatures

Insulating Phase at Low Temperature in Ultrathin La0.8Sr0.2MnO3 Films

Unveiling a Novel Insulator-to-metal Transition in La2NiO4+δ: Challenging Hightemperature Superconductivity Claims in Single-Layer Lanthanum Nickelates

Atomic-Scale Metal-Insulator Transition in SrRuO3 Ultrathin Films Triggered by Surface Termination Conversion

Metal insulator transitions in perovskite SrIrO3 thin films

An atomically controlled insulator-to-metal transition in iridate/manganite heterostructures

Isostructural metal-insulator transition driven by dimensional-crossover in heterostructures

Tuning The Metal-Insulator Transition In Epitaxial Srvo3 Films By Uniaxial Strain

Atomic-Scale Observation of Structure Transition from Brownmillerite to Infinite Layer in SrFeO 2.5 Thin Films

Unexpected Intermediate State Photoinduced in the Metal-Insulator Transition of Submicrometer Phase-Separated Manganites.

Magnetoelectric Transport and Quantum Interference Effect in Ultrathin Manganite Films

Electric and Magnetic Properties of La0.67sr0.33mno3 Thin Films with A Metal-Insulator Crossover Behavior

Reentrance of Low-Temperature Nonmetallic Phase of L a 2 / 3 S R 1 / 3 Mn O 3 (110) Thin Films

Light‐Induced Mott‐Insulator‐to‐Metal Phase Transition in Ultrathin Intermediate‐Spin Ferromagnetic Perovskite Ruthenates (Adv. Mater. 12/2023)

Thickness-driven First-Order Phase Transitions in Manganite Ultrathin Films

Metal insulator transition and magnetotransport anomalies in perovskite SrIr0.5Ru0.5O3 thin films