Abstract:The ground-state orbital occupancy of the Ru$^{4+}$ ion in Ca$_{2-x}$La$_x$RuO$_4$ [x=0, 0.05(1), 0.07(1) and 0.12(1)] was investigated by performing X-ray absorption spectroscopy (XAS) in the vicinity of the O K edge as a function of angle between the incident beam and the surface of the crystals. A minimal model of the hybridization between the O 2p states probed at the K edge and the Ru 4d orbitals was used to analyze the XAS data, allowing the ratio of hole occupancies $n_{xy}/n_{yz,zx}$ to be determined as a function of doping and temperature. For the samples displaying a low-temperature insulating ground-state ($x\leq0.07$), $n_{xy}/n_{yz,zx}$ is found to increase significantly with increasing doping. For x=0.12, which has a metallic ground-state, the XAS spectra are found to be independent of temperature, and not to be describable by the minimal hybridization model. To understand the origin of the evolution of the electronic structure across the phase diagram, we have performed theoretical calculations based on a model Hamiltonian, comprising electron-electron correlations, crystal field ($\Delta$) and spin-orbit coupling ($\lambda$), of a Ru-O-Ru cluster. Our calculations of the Ru hole occupancy as a function of $\Delta/\lambda$ establish that the enhancement of $n_{xy}/n_{yz,zx}$ is driven by significant changes to the crystal field as the tetragonal distortion of the RuO$_6$ octahedral changes from compressive to tensile with La doping. It also shows that the hole occupancy of the O 2p and Ru 4d orbitals display the same trend as a function of $\Delta/\lambda$, thus validating the minimal hybridization model. In essence, our results suggest that the predominant mechanism driving the emergence of the low-temperature metallic phase in La doped Ca$_2$RuO$_4$ is the structurally induced redistribution of holes within the t2g orbitals, rather that the injection of free carriers.

Room‐Temperature Possible Current‐Induced Transition in Ca2RuO4 Thin Films Grown Through Intercalation‐Like Cation Diffusion in the A2BO4 Ruddlesden–Popper Structure

Ca2RuO4 Thin Film Growth by Pulsed Laser Deposition

Weak antilocalization and sign inversion of magnetoresistance on CaRuO3 epitaxial films

Existence of Electron and Hole Pockets and Partial Gap Opening in the Correlated Semimetal Ca3Ru2O7

Thickness-dependent insulator-to-metal transition in epitaxial RuO2 films

Thickness-dependent insulator-to-metal transition in epitaxial films

Tuning the Electronic and Magnetic States of Ca2RuO4 with Proton Evolution

Revealing the Hidden Heavy Fermi Liquid in CaRuO3

Synthesis Science Of Srruo3 And Caruo3 Epitaxial Films With High Residual Resistivity Ratios

Anisotropic Conduction Induced by Current Processing in the La0.8ca0.2mno3 Film

Tuning of the Ru$^{\mathbf{4+}}$ ground-state orbital population in the $\mathbf{4d^4}$ Mott insulator Ca$_2$RuO$_4$ achieved by La doping

Nature of the current-induced insulator-to-metal transition in Ca$_2$RuO$_4$ as revealed by transport-ARPES

Lattice flexibility in Ca 3 Ru 2 O 7 : Control of electrical transport via anisotropic magnetostriction

Unconventional anomalous Hall effect in epitaxially stabilized orthorhombic Ru$^{3+}$ perovskite thin films

Lattice Flexibility in Ca3Ru2O7 : Control of Electrical Transport Via Anisotropic Magnetostriction

Current driven insulator-to-metal transition without Mott breakdown in Ca$_2$RuO$_4$

Structural and metal-insulator transitions in ionic liquid-gated Ca3Ru2O7 surface

Extremely large anisotropic transport caused by electronic phase separation in Ti-doped Ca3Ru2O7

A Unique Crystal Structure of Ca$_2$RuO$_4$ in the Current Stabilized Semi-Metallic State

Itinerant-to-localized Electron Transition in Perovskite CaRu1−xRhxO3

Interfacial Control of Ferromagnetism in Ultrathin La0.67Ca0.33MnO3 Sandwiched Between CaRu1-xTixO3 (x = 0-0.8) Epilayers.