Abstract:Systematic transport measurements have been performed on a series of La0.67Ca0.33MnO3 (LCMO) thin films with varying degrees of anisotropic strain. The strain is induced via epitaxial growth on NdGaO3(001) substrates and varied by controlling the thermal annealing time. An antiferromagnetic insulating (AFI) state, possibly associated with charge ordering, emerges upon thermal annealing. The Hall effect in these materials exhibits features that are indicative of a percolative phase transition and correlate closely with the emergence of the AFI state. In the paramagnetic phase, the Hall resistivity takes on two slopes in all samples: a decreasing negative slope with increasing temperature at low fields, which is attributed to the carrier hopping motion, and an almost temperature independent positive slope at high fields due to diffusive transport of holes. Significantly, the crossover fields of the Hall resistivity slope at different temperatures correspond to the same magnetization, which is interpreted as the critical point of a magnetic field-driven percolative phase transition. At lower temperatures near the zero-field metal-insulator transition, pronounced enhancement of the Hall coefficient with the development of the AFI state is observed. The enhancement peaks near the magnetic field-driven percolation; its magnitude correlates with the strength of the AFI state and is suppressed with the melting of the AFI state by an in-plane magnetic field. The observations resemble many features of the enhancement of the Hall coefficient in granular metal films near the composition-driven percolation.

Anisotropic Conduction Induced by Current Processing in the La0.8ca0.2mno3 Film

Current-processing–induced Anisotropic Conduction in Manganite Films

Electric current induced extrinsic asymmetric I–V behavior in (La,Ca)MnO3 epitaxial thin films on single crystal SrTiO3 substrates

Resistance Steps And Asymmetric Conduction Induced By Currents In La0.8ca0.2mno3 Films

Electric current induced extrinsic asymmetric – behavior in epitaxial thin films on single crystal substrates

Current-induced Asymmetric I-V Behavior of La0.82Ca0.18MnO3 Thin Films and Its Tunability

Reversible Electroresistance at the Ag/La0.67sr0.33mno3 Interface

The Transport Properties of La0.8zr0.2mno3 Film

Magnetically and Electrically Tunable Transport Property of the Heterojunction Composed of La0.9Ca0.1MnO3+δand Nb-doped SrTiO3

Signatures of electronic phase separation in the Hall effect of anisotropically strained La0.67Ca0.33MnO3 films

Effect of Thermal-Annealing on the Magnetoresistance of Manganite-Based Junctions

Effects of Lattice Strains on the Interfacial Potential in La0.67ca0.33mno3/Srtio3 : Nb Heterojunctions

Rectifying Behaviours of Heterojunctions Composed of Manganites with Different Resistive Properties

Tunable anomalous Hall effect and Curie temperature in perpendicular magnetic anisotropic lanthanum doped NiCo2O4 film

Mesoscopic transport in ultrathin films of La$_{0.67}$Ca$_{0.33}$MnO$_3$

Single domain to multi-domain transition due to in-plane magnetic anisotropy in phase separated (La$_{0.4}$Pr$_{0.6}$)$_{0.67}$Ca$_{0.33}$MnO$_{3}$ thin films

Effect of Ferroelectric Polarization Switching on the Electronic Transport Properties of La 0.8 Ca 0.2 MnO 3 Film

Effect of Anisotropic Strain on the Charge Ordering Behavior in Bi0.4ca0.6mno3 Films

Electric and Magnetic Properties of La0.67sr0.33mno3 Thin Films with A Metal-Insulator Crossover Behavior

Nonlinear transport properties of La2∕3Ca1∕3MnO3 and Fe3O4 films in the extreme Joule heating regime

Effects of the Surface Layer of La2/3ca1/3mno3 Thin Films