Metal-insulator Transition in (111) SrRuO3 Ultrathin Films

Ankur Rastogi,Matthew Brahlek,Jong Mok Ok,Zhaoliang Liao,Changhee Sohn,Samuel Feldman,Ho Nyung Lee
DOI: https://doi.org/10.1063/1.5109374
IF: 6.6351
2019-01-01
APL Materials
Abstract:(111)-oriented transition metal oxide thin films provide a route to developing oxide-based topological quantum materials, but the epitaxial growth is challenging. Here, we present the thickness-dependent electronic and magnetic phase diagrams of coherently strained, phase pure (111)-oriented SrRuO3 epitaxial films grown on (111) SrTiO3 substrates using pulsed laser deposition. With decreasing film thickness, it is found that both the metal-to-insulator and magnetic phase transitions occur at the same thickness of 4–5 nm for films grown along both the (111) and the (001) directions. The character of the transport near the metal-insulator transition is, however, distinct for the different directions, which is attributed to the increased electron-electron correlation for (111) SrRuO3. The findings presented here highlight both the broad challenges as well as the possibilities in modifying correlated materials using dimensional tuning of electronic and magnetic properties.
What problem does this paper attempt to address?