Metal–insulator Transition in SrIrO3with Strong Spin–orbit Interaction

Fei-Xiang Wu,Jian Zhou,L. Y. Zhang,Y. B. Chen,Shan-Tao Zhang,Zheng-Bin Gu,Shu-Hua Yao,Yan-Feng Chen
DOI: https://doi.org/10.1088/0953-8984/25/12/125604
2013-01-01
Journal of Physics Condensed Matter
Abstract:The thickness-dependent metal–insulator transition is observed in meta-stable orthorhombic SrIrO3 thin films synthesized by pulsed laser deposition. SrIrO3 films with thicknesses less than 3 nm demonstrate insulating behaviour, whereas those thicker than 4 nm exhibit metallic conductivity at high temperature, and insulating-like behaviour at low temperature. Weak/Anderson localization is mainly responsible for the observed thickness-dependent metal–insulator transition in SrIrO3 films. Temperature-dependent resistance fitting shows that electrical-conductivity carriers are mainly scattered by the electron–boson interaction rather than the electron–electron interaction. Analysis of the magneto-conductance proves that the spin–orbit interaction plays a crucial role in the magneto-conductance property of SrIrO3.
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