Growth of ultra thin vanadium dioxide thin films using magnetron sputtering

Fangfang Song,B. E. White Jr

DOI: https://doi.org/10.48550/arXiv.1608.03911

2016-08-13

Abstract:In this work, the results of fabricating ultra thin VO$_2$ films on the technologically relevant amorphous SiO$_2$ surface using reactive DC magnetron sputtering are presented. Results indicate that a post deposition anneal in low partial pressures of oxygen is an effective way at stabilizing the VO$_2$(M$_{1}$) phase on the SiO$_2$ surface. VO$_2$ films with a thickness of 42nm show a continuous microstructure, and undergo a resistivity change of more than a factor of 200 as the temperature of the film increases above 72$^{o}C$. The film shows hysteresis in the metal-insulator transition temperature upon heating and cooling with a width of approximately 8$^o$C. The resistivity of the low temperature semiconducting phase is found to be thermally activated with an activation energy 0.16$\pm$0.03 $ev$. Stress measurements using X-ray diffraction indicate that the ultra thin VO$_2$ film has a large tensile stress of 2.0$\pm$0.2 $GPa$. This value agrees well with the calculated thermal stress due to differential thermal expansion between the VO$_2$ thin film and silicon substrate. The stress leads to a shift of the metal-insulator transition temperature by approximately 4$^{o}C$.

Materials Science

What problem does this paper attempt to address?

The key problem that this paper attempts to solve is how to prepare ultrathin VO₂ films on the technically important amorphous SiO₂ surface and ensure that these films can maintain their metal - insulator transition (MIT) characteristics. Specifically, the research focuses on the following aspects:

1. **Optimization of growth conditions**: By adjusting the deposition conditions (such as oxygen partial pressure, deposition temperature, and substrate material), find the optimal parameters that can successfully grow high - quality VO₂ films on the amorphous SiO₂ substrate.

2. **Post - annealing treatment**: Explore the effect of post - annealing treatment under low - oxygen - partial - pressure conditions on stabilizing the VO₂ (M1) phase to ensure that the films have the required electrical and structural properties.

3. **Performance verification**: Verify whether the prepared ultrathin VO₂ films can exhibit a significant resistivity change (more than 200 times) when the temperature changes, and analyze key parameters such as their metal - insulator transition temperature, hysteresis phenomenon, and activation energy.

4. **Stress measurement**: Use X - ray diffraction and other means to measure the residual stress in the films, explore the influence of stress on the metal - insulator transition temperature, and explain the causes of stress (such as thermal stress caused by differences in thermal expansion coefficients).

Through these studies, the author aims to provide technical support for the development of a new generation of VO₂ - based electronic devices (such as memories, switches, and sensors), especially to achieve the successful preparation and application of ultrathin VO₂ films in compatibility with existing silicon - based technologies.