Abstract:Resistive-switching -- the current-/voltage-induced electrical resistance change -- is at the core of memristive devices, which play an essential role in the emerging field of neuromorphic computing. This study is about resistive switching in a Mott-insulator, which undergoes a thermally driven metal-to-insulator transition. Two distinct switching mechanisms were reported for such a system: electric-field-driven resistive switching and electrothermal resistive switching. The latter results from an instability caused by Joule heating. Here, we present the visualization of the reversible resistive switching in a planar V$_2$O$_3$ thin-film device using high-resolution wide-field microscopy in combination with electric transport measurements. We investigate the interaction of the electrothermal instability with the strain-induced spontaneous phase-separation in the V$_2$O$_3$ thin film at the Mott-transition. The photomicrographs show the formation of a narrow metallic filament with a minimum width $\lesssim$ 500\,nm. Although the filament formation and the overall shape of the current-voltage characteristics (IVCs) are typical of an electrothermal breakdown, we also observe atypical effects like oblique filaments, filament splitting, and hysteretic IVCs with sawtooth-like jumps at high currents in the low-resistance regime. We were able to reproduce the experimental results in a numerical model based on a two-dimensional resistor network. This model demonstrates that resistive switching, in this case, is indeed electrothermal and that the intrinsic heterogeneity is responsible for the atypical effects. This heterogeneity is strongly influenced by strain, thereby establishing a link between switching dynamics and structural properties.

Electrically driven insulator-to-metal transition in a correlated insulator: Electronic mechanism and thermal description

Nonequilibrium Mean-Field Theory of Resistive Phase Transitions

Field-driven Mott gap collapse and resistive switch in correlated insulators

Non thermal and purely electronic resistive transition in narrow gap Mott insulators

Correlation-driven Metal-Insulator Transition in Proximity to an Iron-Based Superconductor

Orbital magnetic field driven metal-insulator transition in strongly correlated electron systems

Verwey transition as evolution from electronic nematicity to trimerons via electron-phonon coupling

Metal-Insulator Transition in a Semiconductor Heterobilayer Model

Correlated Insulator Collapse due to Quantum Avalanche via In-Gap Ladder States

Optical imaging of strain-mediated phase coexistence during electrothermal switching in a Mott insulator

Voltage-Driven Breakdown of Electronic Order

Mechanism for bipolar resistive switching in transition metal oxides

Non-volatile multi-state electrothermal resistive switching in a strongly correlated insulator thin-film device

Non-Thermal Resistive Switching in Mott Insulators

Impurities and Defects in Mott Systems

Towards a Comprehensive Theory of Metal-Insulator Transitions in Doped Semiconductors

Dynamically Tracking the Joule Heating Effect on the Voltage Induced Metal-Insulator Transition in VO2 Crystal Film

Dynamics of Voltage-Driven Oscillating Insulator-Metal Transitions

Electrically Driven Reversible Insulator-Metal Phase Transition in 1T-Tas2.

Subcycle insulator-to-metal transition in vanadium dioxide by terahertz-field-driven tunneling

Kinetics of thermal Mott transitions in the Hubbard model