Abstract:Lifshitz transition was proposed to explain a change of the topology structure in a Fermi surface induced by continuous lattice deformation without symmetry breaking since 1960. It is well known that the anomalies of the kinetic coefficients (the coefficient of heat conduction and electrical conductivity, viscosity, sound absorption, etc.) are usually closely connected with the Lifshitz transition behavior. 2H-TaS2 is a typical representative to study its anomalies of temperature dependence of heat capacity, resistivity, Hall effect, and magnetic susceptibility. Its geometrical structure of the charge density wave (CDW) phase and layer number dependence of carrier-sign alternation upon cooling in the Hall measurements have not been well understood. The geometrical structure (T-Ts) of the CDW phase was predicted through first principles calculations for bulk and mono-layer 2H-TaS2. Driven by electron-lattice coupling, Ta atoms contract to form a partially gapped CDW phase. The CDW phase has a larger average interlayer separation of S-S atoms in the adjacent two layers compared with the metal phase, which results in a weaker chemical bonding among S-S atoms in the adjacent two layers and then a narrower bandwidth of the energy band. The narrower bandwidth of the energy band leads to a larger density of states (DOS) in the out-of-plane direction above the Fermi level for the CDW phase. As the Fermi level continually drops from the DOS region with a negative slope to that with a positive slope on cooling, the reversal of the p → n type carrier and the pocket-vanishing-type Lifshitz transition occur in the bulk 2H-TaS2. However, the Fermi level slightly drops by 6 meV and happens to be at the positions of pseudo band gaps, so the reduction of in-plane DOS and total DOS is responsible for the always p-type carrier in the mono-layer samples. Our CDW vector of the k-space separation between two saddle points is QSP ≈ 0.62 GK and can provide a theoretical support for the "saddle-point" CDW mechanism proposed by Rice and Scott. Our theoretical explanation gives a new understanding of both Lifshitz transition for symmetry breaking and reversal for the p-n carrier sign in the Hall measurements in various two-dimensional transition metal disulfides.

Electrically Driven Reversible Insulator-Metal Phase Transition in 1T-Tas2.

Band insulator to Mott insulator transition in 1T-TaS$_2$

Band Insulator to Mott Insulator Transition in 1 T -Tas 2

Band insulator to Mott insulator transition in 1<i>T</i>-TaS<sub>2</sub>

Modulation of electronic state in copper-intercalated 1T-TaS 2

Gate-tunable Phase Transitions in 1T-Tas_2

Gate controlled large resistance switching driven by charge density wave in 1T-TaS2/2H-MoS2 heterojunction

Charge-Density Wave Driven Giant Thermionic-Current Switching in 1T-TaS$_{2}$/2H-TaSe$_{2}$/2H-MoS$_{2}$ Heterostructure

Surface-Limited Superconducting Phase Transition on 1 T-TaS2.

Dynamics of electronic states in the insulating Intermediate surface phase of 1T-TaS$_2$

Rubidium-induced Phase Transitions among Metallic,band-Insulating, Mott-insulating Phases in 1T-Tas 2

Gate-tunable Phase Transitions in Thin Flakes of 1T-Tas2.

Mottness Collapse in 1T-Tas2-xsex Transition- Metal Dichalcogenide: an Interplay Between Localized and Itinerant Orbitals

Uncovering the nature of transient and metastable non-equilibrium phases in 1$T$-TaS$_2$

Infrared Nanoimaging of the Metal-Insulator Transition in the Charge-Density-wave Van Der Waals Material 1T−tas2

A Thermal Conductivity Switch Via the Reversible 2H-1T Phase Transition in Monolayer MoTe2

Metal to Mott Insulator Transition in Two-dimensional 1T-TaSe$_2$

Ultrasensitive resistance switching and giant photoresponsivity from visible to mid-infrared of quasi one-dimensional Weyl semimetal (TaSe4)2I

Cavity-mediated thermal control of metal-to-insulator transition in 1T-TaS$_{2}$

Photocurrent Imaging of Multi-Memristive Charge Density Wave Switching in Two-Dimensional 1T-TaS 2

A theoretical study of Lifshitz transition for 2H-TaS2