Abstract:Lifshitz transition was proposed to explain a change of the topology structure in a Fermi surface induced by continuous lattice deformation without symmetry breaking since 1960. It is well known that the anomalies of the kinetic coefficients (the coefficient of heat conduction and electrical conductivity, viscosity, sound absorption, etc.) are usually closely connected with the Lifshitz transition behavior. 2H-TaS2 is a typical representative to study its anomalies of temperature dependence of heat capacity, resistivity, Hall effect, and magnetic susceptibility. Its geometrical structure of the charge density wave (CDW) phase and layer number dependence of carrier-sign alternation upon cooling in the Hall measurements have not been well understood. The geometrical structure (T-Ts) of the CDW phase was predicted through first principles calculations for bulk and mono-layer 2H-TaS2. Driven by electron-lattice coupling, Ta atoms contract to form a partially gapped CDW phase. The CDW phase has a larger average interlayer separation of S-S atoms in the adjacent two layers compared with the metal phase, which results in a weaker chemical bonding among S-S atoms in the adjacent two layers and then a narrower bandwidth of the energy band. The narrower bandwidth of the energy band leads to a larger density of states (DOS) in the out-of-plane direction above the Fermi level for the CDW phase. As the Fermi level continually drops from the DOS region with a negative slope to that with a positive slope on cooling, the reversal of the p → n type carrier and the pocket-vanishing-type Lifshitz transition occur in the bulk 2H-TaS2. However, the Fermi level slightly drops by 6 meV and happens to be at the positions of pseudo band gaps, so the reduction of in-plane DOS and total DOS is responsible for the always p-type carrier in the mono-layer samples. Our CDW vector of the k-space separation between two saddle points is QSP ≈ 0.62 GK and can provide a theoretical support for the "saddle-point" CDW mechanism proposed by Rice and Scott. Our theoretical explanation gives a new understanding of both Lifshitz transition for symmetry breaking and reversal for the p-n carrier sign in the Hall measurements in various two-dimensional transition metal disulfides.

Band Insulator to Mott Insulator Transition in 1 T -Tas 2

Band insulator to Mott insulator transition in 1T-TaS$_2$

Band insulator to Mott insulator transition in 1<i>T</i>-TaS<sub>2</sub>

Superconductivity and Quantum Oscillations in Ternary Weyl Semimetal TaIrTe4

Dualistic insulator states in 1T-TaS2 crystals

Mottness versus unit-cell doubling as the driver of the insulating state in 1T-TaS2

Mottness Collapse in 1T-Tas2-xsex Transition- Metal Dichalcogenide: an Interplay Between Localized and Itinerant Orbitals

Metal to Mott Insulator Transition in Two-dimensional 1T-TaSe$_2$

A theoretical study of Lifshitz transition for 2H-TaS2

A Metallic Mosaic Phase and the Origin of Mott-insulating State in 1T-Tas 2

Uncovering the nature of transient and metastable non-equilibrium phases in 1$T$-TaS$_2$

Stacking and spin order in a van der Waals Mott insulator 1T-TaS2

Rubidium-induced Phase Transitions among Metallic,band-Insulating, Mott-insulating Phases in 1T-Tas 2

Visualizing the evolution from Mott insulator to Anderson insulator in Ti-doped 1 T -TaS 2

Surface-Limited Superconducting Phase Transition on 1 T-TaS2.

Dynamics of electronic states in the insulating Intermediate surface phase of 1T-TaS$_2$

Visualizing the evolution from Mott insulator to Anderson insulator in Ti-doped 1T-TaS2

Gate-tunable Phase Transitions in 1T-Tas_2

Flat band physics in the charge-density wave state of $1T$-TaS$_2$

Effect of stacking order on the electronic state of 1 T − TaS 2

Infrared Nanoimaging of the Metal-Insulator Transition in the Charge-Density-wave Van Der Waals Material 1T−tas2