Band insulator to Mott insulator transition in 1<i>T</i>-TaS<sub>2</sub>

Y. D. Wang,W. L. Yao,Z. M. Xin,T. T. Han,Z. G. Wang,L. Chen,C. Cai,Yuan Li,Y. Zhang
DOI: https://doi.org/10.1038/s41467-020-18040-4
IF: 16.6
2020-01-01
Nature Communications
Abstract:1T-TaS2 undergoes successive phase transitions upon cooling and eventually enters an insulating state of mysterious origin. Some consider this state to be a band insulator with interlayer stacking order, yet others attribute it to Mott physics that support a quantum spin liquid state. Here, we determine the electronic and structural properties of 1T-TaS2 using angle-resolved photoemission spectroscopy and X-Ray diffraction. At low temperatures, the 2/2c-periodic band dispersion, along with half-integer-indexed diffraction peaks along the c axis, unambiguously indicates that the ground state of 1T-TaS2 is a band insulator with interlayer dimerization. Upon heating, however, the system undergoes a transition into a Mott insulating state, which only exists in a narrow temperature window. Our results refute the idea of searching for quantum magnetism in 1T-TaS2 only at low temperatures, and highlight the competition between on-site Coulomb repulsion and interlayer hopping as a crucial aspect for understanding the material's electronic properties. 1T-TaS2 possesses complex electronic phase behaviors in transition-metal di-chalcogenides, undergoing several charge-ordered phases before finally into an insulating state of unknown origin. Here, the authors determine its electronic and structural properties experimentally, revealing its origin.
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