Visualizing the evolution from Mott insulator to Anderson insulator in Ti-doped 1T-TaS2

Wenhao Zhang,Jingjing Gao,Li Cheng,Kunliang Bu,Zongxiu Wu,Ying Fei,Yuan Zheng,Li Wang,Fangsen Li,Xuan Luo,Zheng Liu,Yuping Sun,Yi Yin
DOI: https://doi.org/10.1038/s41535-021-00415-5
IF: 6.856
2022-01-17
npj Quantum Materials
Abstract:Abstract The electronic evolution of doped Mott insulators has been extensively studied for decades in search of exotic physical phases. The proposed Mott insulator 1 T -TaS 2 provides an intriguing platform to study the electronic evolution via doping. Here we apply scanning tunneling microscopy (STM) to study the evolution in Ti-doped 1 T -TaS 2 at different doping levels. The doping Ti atom locally perturbs the electronic and spin state inside the doped star of David and induces a clover-shaped orbital texture at low-doping levels ( x < 0.01). The insulator to metal transition occurs around a critical point x = 0.01, in which small metallic and large insulating domains coexist. The clover-shaped orbital texture emerges at a broader energy range, revealing a competition with the electron correlation. It transforms to a disorder-induced Anderson insulating behavior as doping increases. We directly visualize the trapped electrons in d I / d V conductance maps. The comprehensive study of the series of Ti-doped 1 T -TaS 2 deepens our understanding of the electronic state evolution in a doped strong-correlated system.
materials science, multidisciplinary,physics, applied, condensed matter,quantum science & technology
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