Abstract: Photodetectors with high responsivity, broadband response to mid-infrared range are in a great demand in optical detection area. Topological charge-density-wave (CDW) semimetal materials with high carrier mobility and near zero bandgap provide an emerging route to meet the demand. Here we firstly investigated the photo/magnetic field reshaped CDW melting phenomenon of quasi one dimensional (1D) topological CDW semimetal (TaSe4)2I. Two orders of magnitude of hysteretic resistance variation is achieved due to CDW melting, which can be manipulated by electric, magnetic field or photoexcitation. In situ polarized Raman scattering spectroscopy reveals the concurrent occurrence of both electronic and structural phase transition. Surprisingly, the phase transition could be driven by applying a minimum voltage interval of 10 {\mu}V or a magnetic field interval of 83 Oe at a moderate temperature 120 K. The sharpness of the transition is manifested by single point current jumping (SPCJ). Photodetectors based on this transition has much superior performance than that of quasi two dimensional (2D) TaS2 reported in literature, which is also elaborated by our density functional theory (DFT) calculation. Photoresponsivity at 120 K from visible (405 A/W @ 532 nm) to mid-infrared (31.67 A/W @ 4.73 um) and detectivity (7.2E9 Jones @ 532 nm, 5.6E8 Jones @ 4.73 um) are both one order of magnitude higher than that of TaS2 while the photoresponsivity and detectivity also outperforms commercialized HgCdTe material. Our work not only reveals the important role of dimensionality in CDW phase transition, but also paves a new way for implementing ultrasensitive, broadband photodetector as well as transconductance transistor, memory devices by exploiting quasi-1D topological CDW materials

Cavity-mediated thermal control of metal-to-insulator transition in 1T-TaS$_{2}$

Multimode vibrational coupling across the insulator-to-metal transition in 1T-TaS2 in THz cavities

Multimode vibrational coupling across the insulator-to-metal transition in 1T-TaS$_{2}$ in THz cavities

Modulation of electronic state in copper-intercalated 1T-TaS 2

Dynamic phase transition into a mixed-CDW state in 1$T$-TaS$_2$ via a thermal quench

Infrared Nanoimaging of the Metal-Insulator Transition in the Charge-Density-wave Van Der Waals Material 1T−tas2

Band insulator to Mott insulator transition in 1T-TaS$_2$

Uncovering the nature of transient and metastable non-equilibrium phases in 1$T$-TaS$_2$

Ultrasensitive resistance switching and giant photoresponsivity from visible to mid-infrared of quasi one-dimensional Weyl semimetal (TaSe4)2I

First Order Quantum Phase Transition in the Hybrid Metal-Mott Insulator Transition Metal Dichalcogenide 4Hb-TaS2

Modulating Charge Density Wave Order in a 1T-Tas2/black Phosphorus Heterostructure.

Electric field control of disorder-tunable superconductivity and the emergence of quantum metal at an oxide interface

Gate-tunable Phase Transitions in 1T-Tas_2

Inducing Quantum Phase Transitions in Non-Topological Insulators Via Atomic Control of Sub-Structural Elements

Charge-Density Wave Driven Giant Thermionic-Current Switching in 1T-TaS$_{2}$/2H-TaSe$_{2}$/2H-MoS$_{2}$ Heterostructure

Band insulator to Mott insulator transition in 1<i>T</i>-TaS<sub>2</sub>

Real-space visualization of a defect-mediated charge density wave transition

Nanoscale manipulation of the Mott insulating state coupled to charge order in 1T-TaS2

Electrically Driven Reversible Insulator-Metal Phase Transition in 1T-Tas2.

Hysteretic Electronic Phase Transitions in Correlated Charge Density Wave State of 1T-Tas2

Band Insulator to Mott Insulator Transition in 1 T -Tas 2