Electric field control of disorder-tunable superconductivity and the emergence of quantum metal at an oxide interface

Zheng Chen,Yuan Liu,Hui Zhang,Zhongran Liu,He Tian,Yanqiu Sun,Meng Zhang,Yi Zhou,Jirong Sun,Yanwu Xie

DOI: https://doi.org/10.1126/science.abb3848

2020-09-13

Abstract:We report on an extraordinary field effect of the superconducting LaAlO3/KTaO3(111) interface with Tc ~2 K. By applying a gate voltage (VG) across KTaO3, the interface can be continuously tuned from superconducting into insulating states, yielding a dome-shaped Tc-VG dependence. The electric gating has only a minor effect on carrier density as evidenced in the Hall-effect measurement, while it changes spatial profile of the carriers in the interface, hence the carrier's disorder level significantly. As temperature is decreased, the resistance saturates at lowest temperature in both superconducting and insulating sides, despite an initial dramatic dropping or increasing, which suggests an emergence of quantum metallic state associated with failed superconductor and/or fragile insulator. A VG-modulation of the magnetic-field-driven superconductor to insulator quantum phase transition reveals a non-universal criticality.

Superconductivity

What problem does this paper attempt to address?

The problem that this paper attempts to solve is to achieve the control of superconductivity and quantum metallic state at the LaAlO₃/KTaO₃(111) interface through electric - field regulation. Specifically, the authors studied how to continuously adjust the transition of this interface from the superconducting state to the insulating state by applying the gate voltage (\( V_G \)), and explored the rich quantum phenomena thus induced.

### Key issues:

1. **Superconductivity regulated by electric field**:
- The authors hope to regulate the superconductivity at the LaAlO₃/KTaO₃(111) interface through the electric - field effect (i.e., applying the gate voltage \( V_G \)). Traditional superconductors usually require a very high carrier density \( n_{2D} \), which makes it difficult to directly regulate by electric field. However, the authors found that on this specific interface, the effect of electric - field regulation is significant and can achieve a continuous transition from superconducting to insulating states.

2. **Regulation of carrier disorder**:
- Research shows that the main mechanism of electric - field regulation is not to change the carrier density \( n_{2D} \), but to change the disorder (or mobility) of carriers. By applying different gate voltages \( V_G \), the disorder degree of carriers can be significantly changed, thus affecting superconductivity and resistance behavior.

3. **Emergence of quantum metallic state**:
- At low temperatures, as the temperature decreases, the resistance shows a saturation phenomenon, indicating that there may be a quantum metallic state. This quantum metallic state is related to "failed superconductors" or "fragile insulators", and its physical mechanism has not been fully understood yet, but may be related to strong disorder and electron localization.

4. **Quantum phase transition driven by magnetic field**:
- The authors also studied the influence of the magnetic field perpendicular to the interface on the superconducting - insulating quantum phase transition under different gate voltages \( V_G \). They found that the critical exponent \( z\nu \) is not universal, but changes with temperature and disorder degree, which provides a new perspective for understanding the quantum phase transition in two - dimensional superconductors.

### Summary:

The core problem of this paper is to explore how to achieve the control of superconductivity and quantum metallic state at the LaAlO₃/KTaO₃(111) interface through electric - field regulation. The authors experimentally verified that the main mechanism of electric - field regulation is to change the disorder of carriers rather than the carrier density, and observed rich quantum phenomena, including quantum metallic state and non - universal quantum phase transition. These findings provide an important theoretical and experimental basis for understanding and developing new - type quantum electronic devices.