Abstract:1T-TaS2 is a layered material that exhibits charge density wave (CDW) induced distinct electrical resistivity phases and has attracted a lot of attention for interesting device applications. However, such resistivity switching effects are often weak, and cannot be modulated by an external gate voltage - limiting their widespread usage. Using a back-gated 1T-TaS2/2H-MoS2 heterojunction, here we show that the usual resistivity switching in TaS2 due to different phase transitions is accompanied with a surprisingly strong modulation in the Schottky barrier height (SBH) at the TaS2/MoS2 interface - providing an additional knob to control the degree of the phase-transition-driven resistivity switching by an external gate voltage. In particular, the commensurate (C) to triclinic (T) phase transition results in an increase in the SBH owing to a collapse of the Mott gap in TaS2. The change in SBH allows us to estimate an electrical Mott gap opening of ~71 +/- 7 meV in the C phase of TaS2. On the other hand, the nearly-commensurate (NC) to incommensurate (IC) phase transition results in a suppression in the SBH, and the heterojunction shows a gate-controlled resistivity switching up to 17.3, which is ~14.5 times higher than that of standalone TaS2. The findings mark an important step forward showing a promising pathway to externally control as well as amplify the CDW induced resistivity switching. This will boost device applications that exploit these phase transitions, such as ultra-broadband photodetection, negative differential conductance, fast oscillator and threshold switching in neuromorphic circuits.

What problem does this paper attempt to address?

The problem that this paper attempts to solve is: how to control and enhance the resistivity switching effect of 1T - TaS₂ material caused by charge - density - wave (CDW) through external gate voltage, especially for the problem that the resistivity switching ratio is weak during the nearly commensurate (NC) to incommensurate (IC) phase - transition process and cannot be modulated by external gate voltage. Specifically, by constructing 1T - TaS₂/2H - MoS₂ heterojunction devices, the researchers demonstrated the following points: 1. **Enhancement of resistivity switching**: - By introducing a back - gate structure, external gate - voltage control of resistivity switching in the 1T - TaS₂/2H - MoS₂ heterojunction was achieved. - During the NC to IC phase - transition process, the resistivity switching ratio was increased from the original less than 2 to a maximum of 17.3, which was enhanced by about 14.5 times. 2. **Change in Schottky barrier height (SBH)**: - It was found that different phase - transitions (such as C - to - T phase - transition and NC - to - IC phase - transition) not only changed the resistivity of TaS₂ itself but also significantly affected the Schottky barrier height at the TaS₂/MoS₂ interface. - The C - to - T phase - transition led to an increase in SBH, while the NC - to - IC phase - transition led to a decrease in SBH. This change in SBH provides a new way for regulation through gate voltage. 3. **Estimation of Mott gap**: - Using the electrical transport measurement method, the Mott gap in the C phase of TaS₂ was estimated to be approximately 71 ± 7 meV, which is consistent with the results obtained using optical techniques in the literature. These improvements and findings are of great significance for promoting applications based on these phase - transitions (such as ultra - wide - band photodetection, negative differential conductance, fast oscillators, and neuromorphic circuits). Through the control of external gate voltage, the CDW - induced resistivity switching can be more flexibly adjusted and amplified, thereby improving the performance and practicality of these applications.

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