Charge‐Density‐Wave Resistive Switching and Voltage Oscillations in Ternary Chalcogenide BaTiS3

Huandong Chen,Nan Wang,Hefei Liu,Han Wang,Jayakanth Ravichandran

DOI: https://doi.org/10.1002/aelm.202300461

IF: 6.2

2023-09-22

Advanced Electronic Materials

Abstract:This work reports the observation of threshold resistive switching and neuronal voltage oscillations in a ternary chalcogenide BaTiS3, based on a hysteretic charge‐density‐wave (CDW) phase transition in the system. Mechanisms and the implications of these findings are also discussed. The study establishes BaTiS3 as a new, promising CDW material for future electronic device applications. Phase change materials, which show different electrical characteristics across the phase transitions, have attracted considerable research attention for their potential electronic device applications. Materials with metal‐to‐insulator or charge density wave (CDW) transitions such as VO2 and 1T‐TaS2 have demonstrated voltage oscillations due to their robust bi‐state resistive switching behavior with some basic neuronal characteristics. BaTiS3 is a small bandgap ternary chalcogenide that has recently reported the emergence of CDW order below 245 K. Here, the discovery of DC voltage / current‐induced reversible threshold switching in BaTiS3 devices between a CDW phase and a room temperature semiconducting phase is reported. The resistive switching behavior is consistent with a Joule heating scheme and sustained voltage oscillations with a frequency of up to 1 kHz are demonstrated by leveraging the CDW phase transition and the associated negative differential resistance. Strategies of reducing channel sizes and improving thermal management may further improve the device's performance. The findings establish BaTiS3 as a promising CDW material for future electronic device applications, especially for energy‐efficient neuromorphic computing.

materials science, multidisciplinary,physics, applied,nanoscience & nanotechnology