Controllable Synthesis and Charge Density Wave Phase Transitions of Two-Dimensional 1T-TaS2 Crystals

Xiaoguang Pan,Tianwen Yang,Hangxin Bai,Jiangbo Peng,Lujie Li,Fangli Jing,Hailong Qiu,Hongjun Liu,Zhanggui Hu
DOI: https://doi.org/10.3390/nano13111806
IF: 5.3
2023-06-05
Nanomaterials
Abstract:1T-TaS2 has attracted much attention recently due to its abundant charge density wave phases. In this work, high-quality two-dimensional 1T-TaS2 crystals were successfully synthesized by a chemical vapor deposition method with controllable layer numbers, confirmed by the structural characterization. Based on the as-grown samples, their thickness-dependency nearly commensurate charge density wave/commensurate charge density wave phase transitions was revealed by the combination of the temperature-dependent resistance measurements and Raman spectra. The phase transition temperature increased with increasing thickness, but no apparent phase transition was found on the 2~3 nm thick crystals from temperature-dependent Raman spectra. The transition hysteresis loops due to temperature-dependent resistance changes of 1T-TaS2 can be used for memory devices and oscillators, making 1T-TaS2 a promising material for various electronic applications.
materials science, multidisciplinary,physics, applied,nanoscience & nanotechnology,chemistry
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