Abstract:Transition metal dichalcogenides are lamellar materials which can exhibit unique and remarkable electronic behavior due to effects of electron-electron and electron-phonon coupling. Among these materials, 1T-tantalum disulfide (1T-TaS2) has spurred considerable interest, due to its multiple first order phase transitions between different charge density wave (CDW) states. In general, the basic effects of charge density wave formation in 1T-TaS2 can be attributed to in plane re-orientation of Ta-atoms during the phase transitions. Only in recent years, an increasing number of studies has also emphasized the role of interlayer interaction and stacking order as a crucial aspect to understand the specific electronic behavior of 1T-TaS2, especially for technological systems with a finite number of layers. Obviously, continuously monitoring the out of plane expansion of the sample can provide direct inside into the rearrangement of the layer structure during the phase transition. In this letter, we therefore investigate the c-axis lattice discontinuities of 1T-TaS2 by atomic force microscopy (AFM) method under ultra-high vacuum conditions. We find that the c-axis lattice experiences a sudden contraction across the nearly-commensurate CDW (NC-CDW) phase to commensurate CDW (C-CDW) phase transition during cooling, while an expansion is found during the transition from the C-CDW phase to a triclinic CDW phase during heating. Thereby our measurements reveal, how higher order C-CDW phase can favor a more dense stacking. Additionally, our measurements also show subtler effects like e.g. two expansion peaks at the start of the transitions, which can provide further insight into the mechanisms at the onset of CDW phase transitions.

Atomic Visualization of the 3D Charge Density Wave Stacking in 1T-TaS 2 by Cryogenic Transmission Electron Microscopy

Atomic Lattice Disorder in Charge Density Wave Phases of Exfoliated Dichalcogenides (1T-Tas2)

Modulating Charge Density Wave Order in a 1T-Tas2/black Phosphorus Heterostructure.

Engineering Charge Density Waves by Stackingtronics in Tantalum Disulfide.

Structure and Control of Charge Density Waves in Two-Dimensional 1T-TaS2

Intertwining of Multiphase Charge Density Waves in In-intercalated TaSe2

Discovery of an Unconventional Charge Modulation on the Surface of Charge-Density-wave Material TaTe4

Origin of Distinct Insulating Domains in the Layered Charge Density Wave Material 1T-TaS2

Real-space hole-doping titration and manipulation of correlated charge density wave state in 1T-TaS2

Lattice Discontinuities of 1T-TaS2 across First Order Charge Density Wave Phase Transitions

Stacking and spin order in a van der Waals Mott insulator 1T-TaS2

Origin of Distinct Insulating Domains in the Layered Charge Density Wave Material 1T‐TaS2

Anisotropic Charge Density Wave in Layered 1T−tise2

Observation and Manipulation of a Phase Separated State in a Charge Density Wave Material.

Multiple Quantum States Induced in 1t‐tase2 by Controlling the Stacking Order of Charge Density Waves

Endotaxial Stabilization of 2D Charge Density Waves with Long-range Order

Observation of Anisotropic Charge Density Wave in Layered 1T-Tise2

Electronic Correlation Effects and Orbital Density Wave in the Layered Compound 1T-Tas2

Two-dimensional Charge Density Waves in TaX2 ( X=S , Se, Te) from First Principles

Coupling of Charge, Lattice, Orbital, and Spin Degrees of Freedom in Charge Density Waves in 1T-Tas2

Stacking Order Dynamics in the Quasi-Two-Dimensional Dichalcogenide 1T-Tas2 Probed with Mev Ultrafast Electron Diffraction