Engineering Charge Density Waves by Stackingtronics in Tantalum Disulfide.

Wing Ni Cheng,Mengmeng Niu,Yuan Meng,Xiaocang Han,Jingsi Qiao,Jin Zhang,Xiaoxu Zhao
DOI: https://doi.org/10.1021/acs.nanolett.4c01771
IF: 10.8
2024-01-01
Nano Letters
Abstract:In the realm of condensed matter physics and materials science, charge density waves (CDWs) have emerged as a captivating way to modulate correlated electronic phases and electron oscillations in quantum materials. However, collectively and efficiently tuning CDW order is a formidable challenge. Herein, we introduced a novel way to modulate the CDW order in 1T-TaS2 via stacking engineering. By introducing shear strain during the electrochemical exfoliation, the thermodynamically stable AA-stacked TaS2 consecutively transform into metastable ABC stacking, resulting in unique 3a × 1a CDW order. By decoupling atom coordinates, we atomically deciphered the 3D subtle structural variations in trilayer samples. As suggested by density functional theory (DFT) calculations, the origin of CDWs is presumably due to collective excitations and charge modulation. Therefore, our works shed light on a new avenue to collectively modulate the CDW order via stackingtronics and unveiled novel mechanisms for triggering CDW formation via charge modulation.
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