Origin of Distinct Insulating Domains in the Layered Charge Density Wave Material 1T‐TaS2

Hyungryul Yang,Byeongin Lee,Junho Bang,Sunghun Kim,Dirk Wulferding,Sung‐Hoon Lee,Doohee Cho
DOI: https://doi.org/10.1002/advs.202401348
IF: 15.1
2024-05-11
Advanced Science
Abstract:Scanning tunneling microscopy results highlight the role of vertical charge orders in a layered charge density wave material. Spatially resolved spectroscopic measurements, along with density functional theory calculations, not only demonstrate the lateral coexistence of multiple insulating domains but also reveal the correlation between their electronic properties and stacking configurations. Vertical charge order shapes the electronic properties in layered charge density wave (CDW) materials. Various stacking orders inevitably create nanoscale domains with distinct electronic structures inaccessible to bulk probes. Here, the stacking characteristics of bulk 1T‐TaS2 are analyzed using scanning tunneling spectroscopy (STS) and density functional theory (DFT) calculations. It is observed that Mott‐insulating domains undergo a transition to band‐insulating domains restoring vertical dimerization of the CDWs. Furthermore, STS measurements covering a wide terrace reveal two distinct band insulating domains differentiated by band edge broadening. These DFT calculations reveal that the Mott insulating layers preferably reside on the subsurface, forming broader band edges in the neighboring band insulating layers. Ultimately, buried Mott insulating layers believed to harbor the quantum spin liquid phase are identified. These results resolve persistent issues regarding vertical charge order in 1T‐TaS2, providing a new perspective for investigating emergent quantum phenomena in layered CDW materials.
materials science, multidisciplinary,nanoscience & nanotechnology,chemistry
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